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Dual Gate Emitter Switched Thyristor의 전기적 특성
김남수,이응래,최지원,김영석,김경원,주변권,Kim, Nam-Soo,Lee, Eung-Rae,Cui, Zhi-Yuan,Kim, Yeong-Seuk,Kim, Kyoung-Won,Ju, Byeong-Kwon 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.5
Two dimensional MEDICI simulator is used to study the electrical characteristics of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics with the variations of p-base impurity concentrations and current flow. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have tile better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer u-base structure under the floating N+ emitter indicates to have the better characteristics of latch-up current and breakover voltage in spite of the same turn-off characteristics.