http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Enhancement of the Surface Smoothness of Cu Ribbon for Solar Cell Modules
조태식,조철식 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.1
We studied the relationship between the surface smoothness of the internal Cu ribbon and the morphology of theSn-Pb plating layer for solar cell modules. A bumpy surface was observed on the surface of the solar ribbon, whichcaused irregular reflection of light. Large, Pb-rich, primary α-phases were found below the convex surface of the solarribbon, passing from the surface of the internal Cu ribbon to the surface of the plating layer. The primary α-phasesheterogeneously nucleated on the convex surface of the Cu ribbon, and then largely grew to the convex surface of theplating layer. The restriction of the primary α-phase's formation was enabled by enhancing the smoothness of the Curibbon's surface; it was also possible to increase the adhesive strength and decrease contact resistance. We confirmedthat the solar ribbon's surface smoothness depends on the internal Cu ribbon's surface smoothness.
Effects of Cu Wire’s Shape on the Plating Property of Sn-Pb Solder for Photovoltaic Ribbons
조태식,채문석,조철식 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.4
We studied the plating properties of Sn-Pb solder according to the shape of the Cu wire's cross-section forphotovoltaic ribbon. The thickness of the Sn-Pb layer largely decreased to 29% on a curved Cu surface, compared to aflat Cu surface. This phenomenon is caused by the geometrical decrease in the contact angle of the liquid Sn-Pb solderand an increase in the surface energy of the solid/vapor on the curved Cu surface. We suggest a new ribbon's designwhere the Cu wire's cross-section is a semi-ellipse. These semi-ellipse ribbons can decrease the use of Sn-Pb solderto 64% and increase the photovoltaic efficiency, by reducing the contact area between the ribbon and cell, to 84%. Wealso see an improvement of reflectivity in the curved surface.
Design of Dynamic NMOS Shift Register Used for Image Sensor
김용범,박상식,조철식,이종덕,Kim, Yong Bum,Park, Sang Sik,Cho, Chel Sik,Lee, Jong Duk The Institute of Electronics and Information Engin 1987 전자공학회논문지 Vol.24 No.3
This paper describes the circuit and the layout of the shift register which can be used for a scanner of image sensor. P-well concentration and threshold voltage for proper iperation are calculated on the basso of the fixed process and the layout design. The calculation procedure of maximum operation frequency is also carried out. It is ascertained by SPICE simulation that the shift register produces the outputn pulse without threshold voltage loss up to 13MHz.