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TaF5를 이용하여 플라즈마 원자층증착법으로 증착한 TaN 박막 특성에 관한 연구
정회성 ( Hoi Sung Chung ),권정대 ( Jung Dae Kwon ),강상원 ( Sang Won Kang ) 대한금속재료학회 ( 구 대한금속학회 ) 2005 ELECTRONIC MATERIALS LETTERS Vol.1 No.2
The TaN thin films were deposited by Plasma Enhanced Atomic Layer Deposition (PEALD) using TaF5 and N2/H2/Ar mixed gas plasma at a temperature of 350℃. The film thickness/cycle saturated at 0.41Å/cycle with sufficient pulse time of TaF5. The resistivity of TaN thin film was 610μΩ-㎝ and the N/Ta ratio of thin films was determined to 1.17. Fluorine and hydrogen impurities didn`t detect at this saturation condition. Deposited thin films had polycrystalline cubic TaN structure and columnar structure did not appear. As the plasma time lengthened the thickness/cycle, resistivity and N/Ta ratio of TaN thin films did not saturate but linearly increase. As the increasing of the N2/H2 mixing ratio, the resistivity of TaN thin films was rapidly heightened by formation of Ta3N5 phase, but this dielectric phase could be reduced by lowering the N2/H2 mixing ratio.
원자층 증착법을 이용한 루테늄 나노크리스탈의 증착과 전기적 특성 측정
오흥룡(Heung-Ryong Oh),정회성(Hoi-Sung Chung),강상원(Sang-Won Kang) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
Ruthenium nanocrystals were grown by PEALD using Ru(EtCp)₂ as precursor for nonvolatile memory applications. Maximum nanocrystal density of 2.5*10¹²㎝?², diameter of 2~4㎚ can be obtained. Charging characteristics of Ru nanocrystal structure has been investigated by capacitance-voltage (C-V) curve analysis. Also retention characteristics of nanocrystal memory structure have been studied. Judging from these results, Ru nanocrystal memory can be used as next-generation nonvolatile memory.