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액상공정으로 제작된 ZrInZnO 박막 트랜지스터의 전기적 특성에 관한 연구
정태훈,김시준,윤두현,정웅희,김동림,임현수,김현재,Jeong, Tae-Hoon,Kim, Si-Joon,Yoon, Doo-Hyun,Jeong, Woong-Hee,Kim, Dong-Lim,Lim, Hyun-Soo,Kim, Hyun-Jae 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.6
Soution-processed ZrInZnO (ZIZO) thin-film transistors (TFTs) with varying Zr content were fabricated. The ZIZO TFT (Zr=20 at. %/Zn) has an optimal performance with the saturation field effect mobility of 0.77 $cm^2/Vs$, the threshold voltage (Vth) of 2.1 V, the on/off ratio of $4.95{\times}10^6$, and subthreshold swing (S.S) of 0.73 V/decade. Using this optimized ZIZO TFT, the positive and negative gate bias stress according to annealing temperature was also investigated. While the Vth shifts dramatically after 1,000 s of both gate bias stresses, variations in the S.S are negligible. It suggests that electrons or holes are tem porarily trapped in the gate insulator, the semiconductor, or the interface between both layers.