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이정철(Lee, Jeong-Chul),송진수(Song, Jin-Soo),윤경훈(Yoon, Kyung-Hoon) 한국신재생에너지학회 2006 한국신재생에너지학회 학술대회논문집 Vol.2006 No.06
This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline {mu}c-Si:H single junction and a-Si:H/{mu}c-Si:H tandem solar cells. The major difference of a-Si:H and {mu}c-Si:H cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to {mu}c-Si:H solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The a-Si:H/{mu}c-Si:H tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.
ZnO:Al 투명전도막을 이용한 높은 개방전압을 갖는 비정질 실리콘 박막 태양전지 제조
이정철(Lee, Jeong-Chul),이준신(Yi, Jun-Sin),송진수(Song, Jin-Soo),윤경훈(Yoon, Kyung-Hoon) 한국신재생에너지학회 2006 한국신재생에너지학회 학술대회논문집 Vol.2006 No.06
Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on SnO₂:F and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage V_{oc} than cells prepared on SnO₂:F. Presence of thin microcrystalline p-type silicon layer ({mu}c-Si:H) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as V_{oc}, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high V_{oc}, of 994mv while keeping fill factor (72.7%) and short circuit current density J_{sc} at the same level as for the cells on SnO₂:F TCO. This high V_{oc} value can be attributed to modification in the current transport in this region due to creation of a potential barrier.
고품질 실리콘 박막을 이용한 저가 고효율 실리콘 박막 및 a-Si:H/c-Si 이종접합 태양전지 개발
이정철(Lee, Jeong-Chul),임충현(Lim, Chung-Hyun),안세진(Ahn, Sae-Jin),윤재호(Yun, Jae-Ho),김석기(Kim, Seok-Ki),김동섭(Kim, Dong-Seop),양수미(Yang, Sumi),강희복(Kang, Hee-Bok),이보영(Lee, Bo-young),이준신(Yi, Junsij),송진수(Son, Jinsoo 한국신재생에너지학회 2005 한국신재생에너지학회 학술대회논문집 Vol.2005 No.06
In this paper, silicon thin-film solar cells(Si- TFSC) and a-Si/c-Si heterojunction solar cells(HJ-cell) are investigated. The Si-TFSC was prepared on glass substrate by depositing 1-3{mu}m thin-film silicons by glow discharge method. The a-Si:H/{mu}c-Si:H tandem solar cells on textured ZnO:A1 TCO (transparent conducting oxide) showed improved Jsc in top and bottom cells than that on SnO₂:F TCO. This enhancement of jsc resulted from improved light trapping effect by front textured ZnO:A1. The a-Si/c-Si HJ-cells with simple structure without high efficiency features are suffering from low Voc and Jsc. The improvement of front nip and back interface properties by adopting high quality silicon-films at low temperature should be done both for increasing device performances and production cost.