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이석윤,서동규,김영호,조동율,천희곤,Lee, S.Y.,Seo, D.K.,Kim, Y.H.,Cho, T.Y.,Chun, H.G. 한국센서학회 1997 센서학회지 Vol.6 No.1
본 연구에서는 비정질 $WO_{3}$ 박막을 작용전극으로 $V_{2}O_{5}$ 박막과 NiO 박막을 각각의 대향전극으로 사용한 두 종류의 상보형 일렉트로크로믹 소자를 제작하고 그 특성을 조사 연구하였다. 그 결과 $100{\sim}150nm$ 두께로 진공증착된 $V_{2}O_{5}$ 박막을 대향전극으로 이용하여 제작된 $ITO/WO_{3}/LiClO_{4}-PC/V_{2}O_{5}/ITO$ 구조의 상보형 소자에서는 $1{\sim}2V$ 정도의 낮은 인가전압에서 광변조량이 $50{\sim}60%$를 나타내는 우수한 특성을 나타냈다. 그리고, RF 반응성 스퍼터링 방법으로 제작된 NiO 박막을 대향전극으로 이용한 $ITO/WO_{3}/LiClO_{4}-PC/NiO/ITO$ 구조의 경우 1.5V의 인가전압에 가시광선 영역(${\lambda}=550nm$)에서 약 25% 정도, 근적외선 영역(${\lambda}=850nm$)에서 약 30% 정도의 태양광을 변조할 수 있는 특성을 보였다. In this study, two different types of complementary electrochromic devices using amorphous $WO_{3}$ films as a working electrode, $V_{2}O_{5}$ film and NiO film as counter electrodes respectively were investigated. For the devices using amorphous and crystalline $V_{2}O_{5}$ films of $100{\sim}150nm$ thickness with $ITO/WO_{3}/LiClO_{4}-PC/V_{2}O_{5}/ITO$ structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has been shown that transmittance and reflectance of light could be electrically controlled by low applied voltage. For the devices with $ITO/WO_{3}/LiClO_{4}-PC/NiO/ITO$ structure in which NiO film was deposited by a RF reactive sputtering, the optical modulation in visible light region (${\lambda}=550nm$) and in near infrared light region (${\lambda}=850nm$) were 25% and 30%, respectively.
이석윤,서동규,김영호,조동율,천희곤 ( S . Y . Lee,D . K . Seo,Y . H . Kim,T . Y . Cho,H . G . Chun ) 한국센서학회 1997 센서학회지 Vol.6 No.1
In this study, two different types of complementary electrochromic devices using amorphous WO₃ films as a working electrode, V₂O_5 film and NiO film as counter electrodes respectively were investigated. For the devices using amorphous and crystalline V₂O_5 films of 100∼150nm thickness with ITO/WO₃/LiClO₄-PC/V₂O_5 /ITO structure, an optical modulation of 50∼60% were obtained at a potential range of 1 2V. It has been shown that transmittance and reflectance of light could be electrically controlled by low applied voltage. For the devices with ITO/WO₃/LiClO₄-PC/NiO/ITO structure in which NiO film was deposited by a RF reactive sputtering, the optical modulation in visible light region (λ=550nm) and in near infrared light region (λ.1=850nm) were 25% and 30%, respectively.
이석윤,최진식,손동수,황병철,최승우,조동율,천희곤 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
In the design of complementary electrochromic windows based on WO_(3)/Li+ conducting electrolyte/MO system, a characterization of electrochromic properties of WO_(3)/NiO complementary devices as a function of thickness combinations is necessary in order to predict such as the safe operating voltage, the optical modulation range and the optical switching response. In this paper, the effects of WO_(3) and NiO thin films thickness combination on device performance were systemstically investigated.
이석윤,허명수,손동수,황병철,조동율,천희곤,오태희,송병무,송한식,이우형,이광철,김오규,권영규,구경완 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The thin film growing processes and the photolithographic techniques involved in the manufacturing of thin film magnetic heads are discussed. The thin film heads are composed of the hundreds of electromagnetic transducers on a single wafer and are made of Al_(2)O_(3)-TiC substrate on which Al_(2)O_(3) film as a insulating, protective layer and gap material, Cu film as a multi-turn coil and permalloy film as a magnetic material are deposited and patterned. In this article we will introduce how the thin film heads is fabricated and differ from an integrated semiconductor device. An effort is devoted to develop the formation of PR frame using a lithography process and finally the thin film heads manufacturing technologies.