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종결정을 첨가시킨 다성분계 바리스터의 전기적 특성에 관한 연구
이대복,김명녕,조계선,문성환 大田産業大學校 1995 한밭대학교 논문집 Vol.12 No.0201
A modified technique is proposed to get the desirable low breakdown voltage in the multi-component varistor in this paper. The technique is based on the large abnormal growth with the aid of seed grain preparation. The seed grain of ZnO-BaCO_3 is prepared and is mixed with the multi-element mother material of ZnO-Bi_2O_3-Co_3O_4-MnO_2-Nb_2O_5. The results obtained are as Follows. The growth of seed grain is most remarkable at temperature of 1250[℃] and with Nb_2O_5 of 0.05[mol %]. The largest grain size is obtained with seed grain composition of 5 [wt %]. Also, the leakage current is reduced with Nb_2O_5 addition. In terms of low voltage characteristics, the sintering temperature of 1250 [℃] and the seed grain composition of 5 [wt %] are found to be the most appropriate conditions.
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열처리에 의한 다성분 ZnO세라믹의 비선형 특성에 관한 연구
조계선,김명녕,이대복 大田産業大學校 1994 한밭대학교 논문집 Vol.11 No.0201
ABSTRACTWe fabricated several different ZnO ceramics with three additives Bi2O3, MnO2, and Sb2O3. The sintering temperatures of specimen fabrication were 1,100[℃], 1,150[℃], 1,200[℃], 1,300[℃], and 1,350[℃] respectively.The capacitance of the ZnO devices in the leakage current region is decreased according to increasing applied voltage, but is increased according to higher sintering temperature of the device-fabrication. The shottky barrier height is increased, but the donor concentration and state-density of boundary surfaces is decreased according to higher sintering temperature of the device-fabrication.The values of real part εr″and image part εr″ of complex dielectric constant is followed : It is increased according to the higher environmental temperature of ZnO ceramics. When the frequency is changed from low frequency region to high frequency region, it is increasingly decreased being not related to the sintering and environmental temperatures. It is less changed for the sintering and environmental temperatures in the high frequency region than low frequency region. We fabricated several different ZnO ceramics with three additives Bi_2O_3, MnO_2, and Sb_2O_4. The sintering temperatures of specimen fabrication were 1,100[℃], 1,150[℃], 1,200[℃], 1,300[℃], and 1,350[℃] respectively. The capacitance of the ZnO devices in the leakage current region is decreased according to increasing applied voltage, but is increased according to higher sintering temperature of the device-fabrication. The Shottky barrier height is increased, but the donor concentration and stateenslty of boundary surfaces is decreased according to higher sintering temperature of the device-fabrication. The values of real part ε_r', and image part ε_r", of complex dielectric constant is followed : It is increased according to the higher environmental temperature of ZnO ceramics. When the frequency is changed from low frequency region to high frequency region, it is increasingly decreased being not related to the sintering and environmental temperatures. It is less changed for the sintering and environmental temperatures in the high frequency region than low frequency region.
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電氣二重層 커패시터 分極性 電極用 固體活性炭의 熱處理效果
李大複,金明寧,趙啓善,文晟換 大田産業大學校 1997 한밭대학교 논문집 Vol.14 No.1
Electric double layer capacitor is composed of a pair of polarizable electrode with large surface area, the electrolyte, the separator, and the collector electrode. The properties of samples for the polarizable electrode are discussed ; resistivity, crystal structure through scanning electron microscope, distribution of pore-size, specific surface area of the composite, and specific gravity of size. The correlation of carbonizing temperature to resistivity of the carbon/phenol resin composite was shown that the resistivity was decreased according to the increase of carbonizing temperature. It was confirmed that the open pores formed by resolution during the carbonizing process had not so much been affected by the mixture ratio of materials or the carbonizing temperature. It was shown that the numbers of pore were decreased as the carbonizing temperature was increased. The pores formed are explained as the water or carbon dioxide created through the dissociation of phenol resin during carbonizing process. The specific surface area of carbon/phenol resin composite was smaller than that of raw materials of activated carbon powder. The specific gravity of size to the carbonizing temperature of carbon and pheno1 resin composite was increased as the carbonizing temperature was increased independent of the mixture ratio.
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권순석,조계선,김명녕,이대복 大田産業大學校 1994 한밭대학교 논문집 Vol.11 No.0201
When a MOS device is exposed to ionizing radiation, the resulting effects from this radiation can cause modulation and / or degradation in devices characteristics and its operating life. In this study, for investigation of radiation effects on P-type MOS capacitor, We performed to irradiate on the MOS capacitor with a cobalt-60 gamma ray source and measured the capacitance-voltage ( C-V ) method with gate oxide and total does. From the experimental result, as follows; 1. The flatband voltage (V_fb) and the threshold voltage (V_th) are shifted toward negative bias voltage with increasing irradiation does in P-type MOS capacitors. 2. C-V curves shows are strething-out due to the non-uniformity of interface trap distribution. This results are expiained using surface states at interface radiation-induced traps.
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