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A Simple Route for the Synthesis of Copper Nanowires
이건배,J. H. Seo,안재평,권훈,H. R. Yang 대한금속·재료학회 2012 METALS AND MATERIALS International Vol.18 No.4
We have synthesized Cu nanowires via a simple process using both thermal evaporation and CuCl powders. In this method, complicated processes and special instruments are not required to synthesize Cu nanostructures. In addition, we have used commercial CuCl powders as a precursor. There have been no reports on the preparation of Cu nanostructures using simple instruments together with a commercial source material as in this study. Cu nanostructures of various morphologies were formed at relatively low temperature. The microstructure of the Cu nanostructures was investigated using HRTEM images and SAD pattern analysis.
최단 거리 단말기를 이용하는 비점진적 계층 회의 구성 방법
이건배,Lee, Keonbae 한국전기전자학회 2014 전기전자학회논문지 Vol.18 No.2
계층 회의는 회의에 참가한 단말기 간 교환되는 데이터가 계층 구조로 전달되기 때문에 정보 지연이 발생되게 된다. 본 논문에서, 단말기 사이의 평균 경로 거리를 최소화하고 단말기의 컴퓨터 자원을 고려하여 비점진적 계층 회의를 구성하는 새로운 방법을 제안하고자 한다. 참가를 원하는 단말기들을 현재 구성중인 계층 회의에 포함 시키고자 할 때, 제안한 알고리즘은 회의 내에서 컴퓨터 자원을 고려하여 참가한 단말기들을 가운데 연결 가능한 단말기들을 선택한다. 그 다음, 참가를 원하는 단말기들과 선택 단말기들 간의 거리를 계산하고 거리가 최소가 되는 단말기 쌍을 선택한 뒤, 이 단말기 쌍을 연결하여 계층 회의를 확장한다. 이러한 방법은 모든 단말기 들이 회의에 포함될 때까지 반복된다. 제안한 방법을 이용하여 모의실험 한 결과 비점진적 계층 회의 방법이 단말기 간의 평균 경로 거리 관점에서 점진적 계층회의 방법보다 24% 효율적으로 구성될 수 있음을 알 수 있다. The hierarchical conference causes the data delay because the exchanged data between terminals in the conference go through the hierarchical structure. In this paper, we propose an algorithm which minimizes the average path distance between terminals in a non-incremental hierarchical conference, and which considers the computing resource. For terminals which want to join the ongoing hierarchical conference, our algorithm selects terminals that the new connection is possible among terminals in the conference with the computing resource consideration. Then, after all distance values between the selected terminals and terminals which want to join the ongoing hierarchical conference are computed, and the terminal-pair which have minimum distance value is selected, the ongoing hierarchical conference is extended with a connection of the terminal-pair which consists of a terminal among selected terminals and other terminal among terminals which want to join the ongoing hierarchical conference. This continues until all terminals are included in the conference. As the experimental results with the proposed non-incremental scheme, the hierarchical conference can be organized with 24% better performance than the earlier incremental scheme on the basis of average path distance between terminals.
Formation of ZnO Nanotubes from Zn/ZnO Cables by Thermal Evaporation
이건배,강화석,권훈 대한금속·재료학회 2010 METALS AND MATERIALS International Vol.16 No.5
Various types of nanostructures were synthesized by the simple thermal evaporation of ZnO powders at 1300 °C. Three types of nanostructure were formed as the substrate temperature increased from 100 °C to 300 °C:Zn-core/ZnO-shell nanocables (120 °C to 150 °C), Zn-ZnO core-shell nanocables connected to mesoporous ZnO (200 °C to 260 °C), and ZnO nanotubes (260 °C to 300 °C). The formation process of the ZnO nanotubes,which were formed at the highest temperature (260 °C to 300 °C), involved the solidification of liquid Zn droplets, surface oxidation, and the sublimation of the Zn. This result was demonstrated experimentally as well as via microstructural analysis using XRD, field-emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM) equipped with an energy dispersive X-ray spectrometer (EDS).
Morphological Transition of Vertically Aligned One-Dimensional Zinc Oxide
이건배,조기섭,권훈 대한금속·재료학회 2009 METALS AND MATERIALS International Vol.15 No.4
Vertically aligned 1D ZnO nanostructures have been synthesized on Si (100) substrates by thermal evaporation of zinc oxide powders without using a catalyst. The morphology and size of the as-grown ZnO nanorods gradually change as the distance between the substrate and the source increases. All of the nanorods are synthesized not on the Si substrate, but on the ZnO buffer layer, which forms on Si substrate during the growth process. The as-grown ZnO nanostructures show a morphological transition from nanorods with an abrupt tip to nanorods with a blunt tip, to nanonails with a cap, and finally to ZnO quantum dots as the temperature of the Si substrate decreases. Vertically aligned 1D ZnO nanostructures have been synthesized on Si (100) substrates by thermal evaporation of zinc oxide powders without using a catalyst. The morphology and size of the as-grown ZnO nanorods gradually change as the distance between the substrate and the source increases. All of the nanorods are synthesized not on the Si substrate, but on the ZnO buffer layer, which forms on Si substrate during the growth process. The as-grown ZnO nanostructures show a morphological transition from nanorods with an abrupt tip to nanorods with a blunt tip, to nanonails with a cap, and finally to ZnO quantum dots as the temperature of the Si substrate decreases.