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Mn - Ir - Pt 새로운 반강자성체를 사용한 스핀밸브 거대자기저항에 관한 연구
윤성용(S. Y. Yoon),김장현(J. H. Kim),전동민(D. M. Jeon),김윤식(Y. S. Kim),이두현(D. H. Lee),서수정(S. J. Suh) 한국자기학회 2001 韓國磁氣學會誌 Vol.11 No.4
The Mn_(80)Ir_(18.1)Pt_(1.9) exchange bias layers (EBLs), which have a small amounts of Pt, exhibit a high value of Hex. The Si/NiFe/Mn_(80)Ir_(18.1)Pt_(1.9) EBL shows the largest H(ex) of 187 Oe, which is equivalent to a exchange energy (Jex) of 0.146 erg/㎠. NiFe/Mn_(80)Ir_(18.1)Pt_(1.9) EBLs are estimated to have blocking temperature of about 250℃, which is higher than those of Mn-Ir EBLs and Mn-Ir-Pt EBLs with higher Pt contents. This result implies that a little addition of Pt element promotes thermal stability in the Mn-Ir-Pt EBLs. The chemical stability of Mn-Ir-Pt EBLs was characterized by potentiodynamic test, which was performed in 0.001 M NaCl solution. The current density of Mn-Ir-Pt films was gradually reduced with increasing Pt content. The present results indicate that the Mn-Ir-Pt with a small amount of Pt is suitable for an anti ferromagnetic material for a reliable spin valve giant magnetoresistance device.
Mn - Ir / Ni - Fe 교환결합형 다층박막의 미세구조 및 열적특성
윤성용(S. Y. Yoon),전동민(D. M. Jeon),김장현(J. H. Kim),서수정(S. J. Suh),노재철(J. C. Ro),이확주(Hwak-Joo Lee) 한국자기학회 2000 韓國磁氣學會誌 Vol.10 No.6
The microstructure and thermal properties of the Mn-Ir/Ni-Fe exchange biased multi-layers with various buffer layers and stacking structures have been investigated. The Hex and the Tb depend on the Mn- Ir grain size at the interface between the Mn-Ir layer and the Ni-Fe layer. The (111) preferred orientation of Mn-Ir/Ni-Fe on the Ta buffer layer may promote the values of Jk and Hex. The samples which produce the Hex have the epitaxial relationship at the interface between the Mn-Ir layer and the Ni-Fe layer due to the generation of misfit dislocation.
Mn - Ir / Ni - Fe 다층막의 하지층과 적층구조에 따른 교환이방성과 미세구조 연구
노재철(J. C. Ro),윤성용(S. Y. Yoon),이경섭(K. S. Lee),김용성(Y. S. Kim),서수정(S. J. Suh) 한국자기학회 1999 韓國磁氣學會誌 Vol.9 No.4
The magnetic properties and the microstructures of the Mn-Ir/Ni-Fe multi layers with various stacking structures and buffer layer materials have been investigated. The (111) texture of Mn-Ir/Ni-Fe was observed in the top structures with Ta, Zr, or Ti buffer materials. However, all Mn-Ir/Ni-Fe mutilayers with top structures exhibit high Hex. regardless of the (111) preferred orientation of Mn-Ir film. The samples whose high Hex observed grain-to-grain epitaxial tendency and the large grain of Mn-Ir film at the interface. It can be explained that the Hex does not depend on the (111) texture of the Mn-Ir film and the interface roughness, but depends on the grain size of the Mn-Ir film and the morphology of the interface between the Mn-Ir and the Ni-Fe grains, and the Hc depends on the the interface roughness between the Mn-Ir and the Ni-Fe films.
비결합형 터널접합구조에서 Cr 하지층에 따른 전자기적 특성변화
박진우(J. W. Park),전동민(D. M. Jeon),윤성용(S. Y. Yoon),이종윤(J. Y. Lee),서수정(S. J. Suh) 한국자기학회 2003 韓國磁氣學會誌 Vol.13 No.3
Cross-geometrical Cr/Co/Al-Ox/Co/Ni-Fe tunnel junctions were fabricated by magnetron sputtering. To form an insulating layer, The Al layer was oxidized in an atmosphere of oxygen-argon mixture at low power after deposition. To enhance the coercivity of the bottom Co layer, The Cr seed layer was deposited on the glass and it led to increase in coercivity. The coercivity increase is due to the increase of roughness through the Cr thickness. In over oxidation time, the oxidation of Co bottom layer and flat interface of insulator can increase the bottom Co coercivity. But TMR ratio gradually decrease. TMR ratio is relevant with Cr thickness, insulator thickness, and oxidation time. The maximum TMR ratio was 14% at room temperature and the TMR ratio was decreased to half at 0.51 V.