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- 저자 : 육대성(Dae-Seong Yook) (검색결과 2 건)
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0.5W 미만의 대기전력을 갖는 파워스위칭 IC 설계에 관한 연구
육대성(Dae-Seong Yook),손상희(Sang Hee Son),정원섭(Won-Sup Chung) 한국정보기술학회 2012 한국정보기술학회논문지 Vol.10 No.3
In this paper, we design 0.5W power switching IC to reduce the unnecessary standby power to less than 0.5W. The system has PWM function and controls the external power MOSFET. The designed IC is divided into the parts of power division, control division, output division, and protect division. Through the optimized design process of discrete blocks, we can get total operational current under 1.2mA. UVLO, voltage regulator, protection curcuit, level shift, and driver of proposed IC are simulated by CSMC 0.5um high voltage process, and the other circuits are simulated by CSMC 0.5um normal voltage process. The HSPICE simulation results show that the proposed IC controls the gate switching voltage of power MOSFET depending on burst mode operation and its total current consumption is 1.167mA. This result is good enough for the design target of 1.2mA and it shows that standby power consumption can be reduced by 364.03mW in standby mode.
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LCD 드라이버 IC에 적용 가능한 온도센서 설계에 관한 연구
오선영(Seon-Young Oh),육대성(Dae-Seong Yook),손상희(Sang-Hee Son) 한국정보기술학회 2011 한국정보기술학회논문지 Vol.9 No.1
It was known that the LCD driver IC has weakness in high temperature usually. In this paper, To avoid the damage to the LCD source driver IC (LDI) from high temperature, feedback temperature sensor in internal type applicable to the LDI, is proposed. By addition of new switches to basic PTAT circuit for proper feedback operation, it has two operation modes of temperature sensing mode and power saving mode. Active cascode is added to current mirror with excellent current matching characteristics to fit for output application specification of the LDI. In the simulation results, In temperature sensing mode, it generates the PTAT voltage and shows the linear output voltage of 1V at 75℃ and 2V at 125℃. In power saving mode, output current is small value of 2nA to 12.9nA and output voltage is almost 0V. This proposed temperature sensor has simple structure without the ADC and is designed with the standard CMOS process so it has lower cost of chip production than temperature sensor is added to the out of the LDI.
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