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모듈레이티드 펄스 스퍼터링으로 상온 증착한 Indium-Tin-Oxide (ITO) 나노 박막
유영군(Younggoon You),정진용(Jinyong Jeong),주정훈(Junghoon Joo) 한국표면공학회 2014 한국표면공학회지 Vol.47 No.3
High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power , but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported . The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas , MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, In2O3 : SnO2 composition ratio of 9 : 1 wt% target was used , Ar : O2 flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of O2 and then fixed 2 ~ 6 sccm was compared against that . The thickness of the thin film deposition is fixed at 60 nm , when the partial pressure of oxygen at 9.1%, the specific resistance value of 4.565 × 10<SUP>?4</SUP> Ωcm, transmittance 86.6%, mobility 32.29 cm2 / Vs to obtain the value
유도 결합 플라즈마-스퍼터 승화법을 이용한 고분자 전해질 연료전지 분리판용 CrN 박막의 내식성연구
유영군(Younggoon You),주정훈(Junghoon Joo) 한국표면공학회 2013 한국표면공학회지 Vol.46 No.4
In this study, low-cost, high-speed deposition, excellent processability, high mechanical strength and electrical conductivity, chemical stability and corrosion resistance of stainless steel to meet the obsessive-compulsive (0.1 mm or less) were selected CrN thin film. new price reduction to sputter deposition causes - the possibility of sublimation source for inductively coupled plasma Cr rods were attempts by DC bias. 0.6 Pa Ar inductively coupled plasmas of 2.4 MHz, 500 W, keeping Cr Rod DC bias power 30 W (900 V, 0.02 A) is applied, N₂ flow rate of 0.5, 1.0, 1.5 sccm by varying the characteristics of were analyzed. N₂ flow rate increases, decreases and Cr₂N, CrN was found to increase. In addition to corrosion resistance and contact resistance, corrosion resistance, electrical conductivity was evaluated. corrosion current density than N₂ 0 sccm was sure to rise in all, N₂ 1 sccm at 4.390 × 10<SUP>?7</SUP> (at 0.6 V) A·cm<SUP>?2</SUP>, respectively. electrical conductivity process results when N₂ 1 sccm 28.8 mΩ/cm² with the lowest value of the contact resistance was confirmed that came out. The OES (SQ-2000) and QMS (CPM-300) using a reactive deposition process to add N₂ to maintain a uniform deposition rate was confirmed that.)