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Post-Metallization Annealing 시 passivation 막이 나노 NMOSFET 용 I/O 소자의 핫-캐리어 특성에 미치는 영향
유욱상(Ooksang Yoo),한인식(Inshik Han),주한수(Hansoo Joo),손영환(Younghwan Son),구태규(Taegyu goo),최원호(Wonho Choi),최성욱(Seongwook Choi),임민규(Mingyu Lim),강영석(Youngseok Kang),이정환(Junghwan Lee),왕진석(Jinsuk Wang),이가원(Gawon 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11
In this paper, we analyze effect of passivation(Si₃N₄ film) condition under Post-Metallization Annealing on hot carrier degradation. Very thick Si₃N₄(≥ 10000A) prevents H₂ from diffusing into interface(Si-SiO₂), so that hot carrier degradation gets severe. Therefore PMA is performed before Si₃N₄ deposition for hot carrier immunity.
왕진석,정홍배 연세대학교 대학원 1974 원우론집 Vol.2 No.1
Abstract In this paper, the difference of conductivities on Ge-Si-Te memory devices are investigated experimentally by making use of samples which are prepared with material of high purities Te(99.999%) and low purities Te (99.99%). By X-ray diffraction analysis and microscope, samples are proven to be plasses. Conductivities of samples are measured at temperature between 300˚K and 500˚K. At room temperrature, the dependence of frequency is investigated at the range between 50Hz and 200 Hz. As results by heat treaed method dc conductivities of heat treated samples are 101-102 orders higher than untreated samples and frequency dependence of ac conductivities are approximately same.