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실리콘 카바이드(SiC) 단결정 기판의 화학적 기계적 연마
안준호(Joonho An),이명한(Myounghan Lee),유민종(Minjong Yuh),박영봉(Yeongbong Park),서헌덕(Heondecok Seo) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.5
This study focused on investigation into the effect of the slurry of CMP on both material removal rate and subsurface damage removal by mixing the nano-sized diamond abrasives and oxidizer into the conventional colloidal silica slurry. 2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. The sliced SiC wafers lapped by a slurry with 1 ~ 9 ㎛ diamond particles. Wafers after the final mechanical polishing using the slurry of 0.1 ㎛ diamond particles were diced as the coupon wafers sized by 10? 0㎟ for CMP. The surface roughness of SiC wafer was analyzed by an atomic force microscope (AFM) and the weight change of the SiC wafer between before and after CMP process was measured in order to determine the MRR value. Molten KOH etching at 490℃ for 3min was performed to confirm the presence of subsurface damage after CMP.
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계면활성제 함량 조절을 통한 구리 하이브리드 구조물의 화학 기계적 평탄화
장수천,안준호,박재홍,정해도,Jang, Soocheon,An, Joonho,Park, Jaehong,Jeong, Haedo 한국재료학회 2012 한국재료학회지 Vol.22 No.11
Recently, the demand for the miniaturization of package substrates has been increasing. Technical innovation has occurred to move package substrate manufacturing steps into CMP applications. Electroplated copper filled trenches on the substrate need to be planarized for multi-level wires of less than $10{\mu}m$. This paper introduces a chemical mechanical planarization (CMP) process as a new package substrate manufacturing step. The purpose of this study is to investigate the effect of surfactant on the dishing and erosion of Cu patterns with the lines and spaces of around $10/10{\mu}m$ used for advanced package substrates. The use of a conventional Cu slurry without surfactant led to problems, including severe erosion of $0.58{\mu}m$ in Cu patterns smaller than $4/6{\mu}m$ and deep dishing of $4.2{\mu}m$ in Cu patterns larger than $14/16{\mu}m$. However, experimental results showed that the friction force during Cu CMP changed to lower value, and that dishing and erosion became smaller simultaneously as the surfactant concentration became higher. Finally, it was possible to realize more globally planarized Cu patterns with erosion ranges of $0.22{\mu}m$ to $0.35{\mu}m$ and dishing ranges of $0.37{\mu}m$ to $0.69{\mu}m$ by using 3 wt% concentration of surfactant.
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