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계면활성제 함량 조절을 통한 구리 하이브리드 구조물의 화학 기계적 평탄화
장수천,안준호,박재홍,정해도,Jang, Soocheon,An, Joonho,Park, Jaehong,Jeong, Haedo 한국재료학회 2012 한국재료학회지 Vol.22 No.11
Recently, the demand for the miniaturization of package substrates has been increasing. Technical innovation has occurred to move package substrate manufacturing steps into CMP applications. Electroplated copper filled trenches on the substrate need to be planarized for multi-level wires of less than $10{\mu}m$. This paper introduces a chemical mechanical planarization (CMP) process as a new package substrate manufacturing step. The purpose of this study is to investigate the effect of surfactant on the dishing and erosion of Cu patterns with the lines and spaces of around $10/10{\mu}m$ used for advanced package substrates. The use of a conventional Cu slurry without surfactant led to problems, including severe erosion of $0.58{\mu}m$ in Cu patterns smaller than $4/6{\mu}m$ and deep dishing of $4.2{\mu}m$ in Cu patterns larger than $14/16{\mu}m$. However, experimental results showed that the friction force during Cu CMP changed to lower value, and that dishing and erosion became smaller simultaneously as the surfactant concentration became higher. Finally, it was possible to realize more globally planarized Cu patterns with erosion ranges of $0.22{\mu}m$ to $0.35{\mu}m$ and dishing ranges of $0.37{\mu}m$ to $0.69{\mu}m$ by using 3 wt% concentration of surfactant.
Effect of Surfactant on Package Substrate in Chemical Mechanical Planarization
장수천,정해도,여민종,박재홍 한국정밀공학회 2015 International Journal of Precision Engineering and Vol.2 No.1
The demand for pattern miniaturization on package substrates has been steadily increasing. One technical innovation for the package substrate manufacturing process was chemical mechanical planarization (CMP). In conventional wiring, it was possible to remove extraneous copper through only the etching process. However, etching defects occur with narrower line widths. As the package substrate has a Cu hybrid structure through Cu plating and copper clad laminate (CCL) removal, it is necessary to apply the CMP to remove excess copper. However, defects are generated by the CMP process due to mechanical and chemical effects from the slurry. This study investigated the surfactant effect on Cu dishing and erosion in patterns with approximately 10/10 µm line width and spacing. The conventional Cu slurry without a surfactant had severe erosion (0.58 µm) in Cu patterns of 4/6 µm and deep dishing (4.2 µm) in Cu patterns of 14/16 µm. However, the experimental results showed that the friction force during CMP decreased, with smaller dishing and erosion as surfactant concentration increased. Finally, globally planarized Cu patterns were realized with an erosion range of 0.22 µm to 0.35 µm and a dishing range of 0.37 µm to 0.69 µm with 3 wt.% surfactant.
Effect of Glycine on Copper CMP
장수천,정해도,여민종,박인호,박재홍 한국정밀공학회 2016 International Journal of Precision Engineering and Vol.3 No.2
Chemical mechanical polishing (CMP) technology has been newly applied in printed circuit board (PCB) field for satisfying requirements from miniaturization of mobile devices. This paper focuses on the complexing agent to increase the removal rate for thick Cu layer. In order to find out optimum type and concentration of the complexing agent, experiments have been done in terms of electrochemical analysis, surface roughness and removal rate. As concentration of complexing agent (glycine) in slurry increased, it was confirmed that corrosion current density increased in potentio-dynamic curve since it promoted production of new Cu ion by decreasing amount of Cu ion of chemical reaction layer. Finally, it was possible to confirm that chemical reaction had a direct correlation with removal rate through CMP evaluation.
Wafer size effect on material removal rate in copper CMP process
유민종,장수천,박인호,정해도 대한기계학회 2017 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.31 No.6
The semiconductor industry has employed the Chemical mechanical planarization (CMP) to enable surface topography control. Copperhas been used to build interconnects because of its low-resistivity and high-electromigration. In this study, the effect of wafer size onthe Material removal rate (MRR) in copper CMP process was investigated. CMP experiments were conducted using copper blanket waferswith diameter of 100, 150, 200 and 300 mm, while temperature and friction force were measured by infrared and piezoelectric sensors. The MRR increases with an increase in wafer size under the same process conditions. The wafer size increased the sliding distanceof pad, resulting in an increase in the process temperature. This increased the process temperature, accelerating the chemical etching rateand the dynamic etch rate. The sliding distance of the pad was proportional to the square of the wafer radius; it may be used to predictCMP results and design a CMP machine.
Development of Green CMP by Slurry Reduction through Controlling Platen Coolant Temperature
유민종,장수천,김형재,이현섭,정해도 한국정밀공학회 2015 International Journal of Precision Engineering and Vol.2 No.4
Chemical mechanical polishing (CMP) is currently replacing a conventional chemical etching or mechanical polishing to remove overburdened copper deposit in printed circuit board (PCB) manufacturing process owing to its ability to realize a global planarization. In order to stabilize the CMP as one of the PCB manufacturing processes, the CMP machine has been investigated. This paper introduces a newly developed Oscar-type CMP machine and copper CMP process to polish rectangular PCB with a size up to 510 mm by 510 mm, especially focused on the effect of platen coolant temperature on removal rate and removal uniformity during copper CMP to reduce the amount of slurry consumed. The CMP experiments are implemented under the coolant temperatures of 10, 15, 20, 25 and 30oC, and the slurry flow of 600, 800, 1000 and 1200 mL/min. The experimental results show that the removal rate goes up with an increase in the platen coolant temperature during polishing at a fixed slurry flow rate, and the removal rate goes down at any fixed the platen coolant temperature when the slurry flow rate increases. It means that the reduction of thermochemical reaction rate in the chemical mechanical removal, resulting from cooling down of the copper surface when the.