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RF 마그네트론 스퍼터링법에 의해 증착된 구리막의 특성
송재성,오영우 한국전기전자재료학회 1996 電氣電子材料學會誌 Vol.9 No.7
In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C $U_{4-d}$(low resistivity) / C $U_{d}$(high adhesion) / Si-wafer] on the thickness of d has been investigated. The films formed with this deposition methods had the low electrical resistivity of about 2.6.mu..ohm..cm and high adhesion of about 700g/cm.m.m.
컴플라이언스를 실현할 수 있는 매니퓰레이터 선단부의 기계적 구조의 설계
송재성,서만승 동명정보대학교 1999 東明情報大學校論文集 Vol.2 No.-
An analytical method for the design of compliant end-effector appropriate to the given assembly task is presented. Use of passive compliance in mating operations is effective in order to prevent excessive contact forces and to guide a part to be assembled to its goal location despite of positioning errors. First, quasi-static equilibrium conditions are established based on the kinematic and quasi-static analyses of mechanical contacts. Second, feasible candidates for the desired end-point compliance are calculated based on the equilibrium conditions. Next, the configurations and the spring constants of virtual springs consisting of the desired compliant mechanism are designed. Simulation of mating operations is then introduced in order to determine the spring constants and to verify whether the derived compliant mechanism enables the operations successful or not. Finally, one numerical example is shown to illustrate the proposed design method.