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신사무엘(Samuell Shin),손정만(Jungman Son),구용서(Yongseo Koo) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
This study is presented about electrical characteristics of 2500V planar gate IGBT The breakdown voltage and saturation voltage (Vce, sat) according to variations of gate length, emitter window region, and drift region depth were simulated using 2D simulator (MEDICI). In simulation results, when the gate length was 15㎛, the emitter window region was 8㎛ and drift region depth was 375㎛, the breakdown voltage and saturation voltage (Vce, sat) of optimized IGBT were simulated to 2810V, 3.4V respectively.