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신사무엘(Samuell Shin),손정만(Jungman Son),구용서(Yongseo Koo) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
This study is presented about electrical characteristics of 2500V planar gate IGBT The breakdown voltage and saturation voltage (Vce, sat) according to variations of gate length, emitter window region, and drift region depth were simulated using 2D simulator (MEDICI). In simulation results, when the gate length was 15㎛, the emitter window region was 8㎛ and drift region depth was 375㎛, the breakdown voltage and saturation voltage (Vce, sat) of optimized IGBT were simulated to 2810V, 3.4V respectively.
낮은 대기전류 및 빠른 과도응답특성을 갖는 LDO 레귤레이터
권상욱(Sang-Wook Kwon),도경일(Kyoung-Il Do),서정주(Jeong-Ju Seo),우제욱(Jae Wook Woo),구용서(YongSeo Koo) 대한전자공학회 2019 대한전자공학회 학술대회 Vol.2019 No.6
This paper present a Low Drop Out regulator (LDO) that improves the road transient response characteristics by using a voltage regulator. A voltage regulator circuit is placed between the error amplifier and the pass transistor inside the LDO regulator to improve the current characteristics of the voltage line, The proposed Fast Transient LDO structure was designed by a 0.18 um process with Cadence’s Virtuoso simulation. According to test results, the proposed circuit has a improved transient characteristics compare with conventional LDO. The simulation results show that the transient of rising increases from –836.2uV to –123.3uV and the transient of falling decreases from 913.1uV to 715.8uV compared with conventional LDO.