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Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> 박막의 구조적 특성과 유전 특성에 미치는 산소 열처리 효과
차유정,성태근,남산,정영훈,이영진,백종후,Cha, Yu-Jeong,Seong, Tae-Geun,Nahm, Sahn,Jeong, Young-Hun,Lee, Young-Jin,Paik, Jong-Hoo 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.4
$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.
송명은,성태근,김진성,조경훈,선종우,남산 대한금속·재료학회 2009 ELECTRONIC MATERIALS LETTERS Vol.5 No.1
A 0.96Bi5Nb3O15-0.04Bi4Ti3O12 (0.96B5N3-0.04B4T3) ceramic showed a high dielectric constant (k) of 314, probably due to the increased dipole moment caused by the replacement of Nb5+ ions by Ti4+ ions. The 0.96B5N3-0.04B4T3 films were well formed on the Pt/Ti/SiO2/Si substrate. Films grown at temperatures lower than 400℃ had an amorphous phase but small Bi3NbO7 crystals were considered to have been formed in these films. The film grown at 300℃ exhibited a high k value of 83 with a low dielectric loss of 0.5%. The leakage current density of the film grown at low oxygen pressure (OP) was high and decreased with increasing OP to a minimum at an OP of 200 mTorr, after which it increased with further increase in OP. This variation of the leakage current density with OP was explained by the existence of oxygen vacancies and interstitial oxygen ions in the film. The 0.96B5N3-0.04B4T3 film grown under 200 mTorr OP exhibited a high k value of 83, a low leakage current density of 8 × 10-8A/㎠ at 0.3MV/cm and a high breakdown field of 0.4MV/cm.