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Improvement of the electrical properties of TiO2-doped Bi5Nb3O15 thin films by the addition of MnO2
선종우,Sang-Hyo Kweon,Tae-Geun Seong,Jin-Seong Kim,Byoung-Jik Jeong,남산 한국물리학회 2013 Current Applied Physics Vol.13 No.1
The leakage current density of a 1.0 mol% TiO2-doped Bi5Nb3O15 (TB5N3) film was high, and the breakdown electric field was low. This could be attributed to the presence of intrinsic oxygen vacancies and free electrons. The electrical properties of the TB5N3 film improved upon the addition of MnO2 because of the formation of extrinsic oxygen vacancies, which caused the number of intrinsic oxygen vacancies to decrease in order to maintain the equilibrium concentration of oxygen vacancies in the film. However, the electric properties degraded when the MnO2 content exceeded 15.0 mol% because of the formation of interstitial oxygen ions and holes. The dielectric constant ( εr) of the TB5N3 film slightly decreased upon the addition of a small amount of MnO2. The TB5N3 film with 15.0 mol% MnO2, which exhibited a small leakage current density of 2.5 x 10-11 A/cm2 at 0.15 MV/cm and a high breakdown electric field of 0.47 MV/cm, still maintained a large εr of 118 with a small loss tangent of 2.0% at 100.0 kHz.
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송명은,성태근,김진성,조경훈,선종우,남산 대한금속·재료학회 2009 ELECTRONIC MATERIALS LETTERS Vol.5 No.1
A 0.96Bi5Nb3O15-0.04Bi4Ti3O12 (0.96B5N3-0.04B4T3) ceramic showed a high dielectric constant (k) of 314, probably due to the increased dipole moment caused by the replacement of Nb5+ ions by Ti4+ ions. The 0.96B5N3-0.04B4T3 films were well formed on the Pt/Ti/SiO2/Si substrate. Films grown at temperatures lower than 400℃ had an amorphous phase but small Bi3NbO7 crystals were considered to have been formed in these films. The film grown at 300℃ exhibited a high k value of 83 with a low dielectric loss of 0.5%. The leakage current density of the film grown at low oxygen pressure (OP) was high and decreased with increasing OP to a minimum at an OP of 200 mTorr, after which it increased with further increase in OP. This variation of the leakage current density with OP was explained by the existence of oxygen vacancies and interstitial oxygen ions in the film. The 0.96B5N3-0.04B4T3 film grown under 200 mTorr OP exhibited a high k value of 83, a low leakage current density of 8 × 10-8A/㎠ at 0.3MV/cm and a high breakdown field of 0.4MV/cm.
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