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산소압력이 테프론 휨성 기판위에 형성된 ZRO 투명박막의 전기적 특성에 미치는 영향
서광종,장호정,Suh Kwang Jong,Chang Ho Jung 한국재료학회 2005 한국재료학회지 Vol.15 No.4
We investigated the crystalline and electrical properties of ZnO thin films for transparent electrode as a function of the oxygen pressures during the deposition. The ZnO thin films were deposited on a flexible teflon substrates by the pulsed laser deposition. From the X-ray diffraction, ZnO films showed c axis oriented ZnO(0002) crystal structure. The FWHM (full width at half maximum) values decreased from $0.51^{\circ}\;to\;0.34^{\circ}$ as the oxygen pressure increased from 0.1 mTorr to 10.0 mTorr showing the improvement of crystallinity. The resistivity and hall mobility of ZnO film deposited at the oxgen pressure of 0.1 mTorr at $200^{\circ}C$ was about $5\times10^{-4}\Omega{\cdot}cm\;and\;20cm^2/V{\cdot}s$, respectively. The optical transmittance of the ZnO films on flexible teflon substrate was found to be above $85\%$.
Ga 첨가량이 (Zn,Mg)O 투명전극 막의 전기적, 결정학적 특성에 미치는 영향
서광종,와카하라 아키히로,요시다 아키라,Suh, Kwang-Jong,Wakahara, Akihiro,Yoshida, Akira 한국재료학회 2005 한국재료학회지 Vol.15 No.8
(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.
펄스 레이저 증착법을 이용한 $Zn_{1-x}Mg_xO$ 박막의 제작과 특성연구
서광종,Suh, Kwang-Jong 한국마이크로전자및패키징학회 2005 마이크로전자 및 패키징학회지 Vol.12 No.1
To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.
스크린 인쇄법과 졸겔법에 의해 제작된 (Pb,La)TiO_3 강유전체막의 특성 연구
장호정,김민영,서광종,장지근 단국대학교 신소재기술연구소 1998 신소재 Vol.8 No.-
Pt/SiO_2/Si 기판구조위에 스크린인쇄법과 졸-겔법에 의해 as-coated (Pb, La)TiO_3(PLT), 후막과 형성하고 650℃ 후속열처리 온도에서 결정화한후 결정특성과 전기적 특성을 조사하였다. 650℃ 온도에서 후속열처리된 PLT시료의 경우 전형적인 perovskite 결정구조를 보여주었다. 후속 열처리된 PLT 후막과 박막의 두께는 약 3.5㎛와 0.8㎛로 각각 나타났으며 Pt 전극과 PLT막 사이에는 비교적 평활한 계면형상을 보여주었다. PLT 후막과 박막시료의 1 kHz 주파수에서 유전상수는 660과 190의 값을 나타내었으며 잔류분극(2Pr) 값은 약 1μC/㎠과 7μC/㎠을 각각 나타내었다. 후막 PLT 시료에 의해 박막시료에서 잔류분극값의 증가는 박막시료가 보다 양호한 결정성을 가지고 있기 때문으로 사료된다. 누설전류의 크기는 약 0.3∼0.8 μA/㎠의 값을 나타내어 비교적 양호한 누설전류 특성을 얻었다. The as-coated (Pb,La)TiO_3(PLT) thick and thin films were prepared on Pt/SiO_2/Si substrates by the screen printing and the sol-gel methods. The post-annealing was carried out at 650℃ for the crystallization. The crystal structures and electrical properties were investigated. The PLT films annealed at 650℃ showed the typical perovskite crystal structures. The thickness of PLT thick and thin films were about 3.5 ㎛ and 0.8 ㎛ respectively, showing relatively smooth cross-sectional surface between Pt electrode and PLT film. The PLT thick and thin films annealed at 650℃ indicated about 660 and 190 for the dielectric constant and 1 μC/㎠ for the remanent polarization(2Pr), respectively. The higher Pr value in the thin film sample compared to the thick film may attributed to the good crystal structure of the thin film. The leakage currents were about 0.3-0.8μA/㎠.