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Lead zirconate와 Iead zirconate titanate 다층박막 캐패시터의 C-V 특성
배세환 東亞大學校附設基礎科學硏究所 2002 基礎科學硏究論文集 Vol.19 No.1
졸-갤법으로 lead zirconate(PZ)와 lead zirconat titante (PZT)의 다층 박막을 만들어 구조와 C-V 특성을 조사하였다. 시료는 Pt coted Si 기판상에 PZ와 PZT를 교대로 각각 3번씩 증착 하였으며 두께는 한번 증착시 약 450Å이 되게 조절하여 전체적으로 2700∼3000Å 정도 되게 하였다. 증착이 이루어진 다층박막은 2가지 방법으로 열처리하여 결정화하였다. 매 층을 증착한 후 열처리한 시료는 강유전성과 반강유전성의 혼합특성을 나타내었다. 이들 두 종류의 다층박막에 대해 C-V 특성이 조사되었다. Lead Zirconate (PbZrO_3: PZ) and Lead Zirconate Titanate(PZT) multilayered thin films were prepared by sol-gel technique. Sets of film(each year has b 450Å thickness) made by one PZ after one PZT layer are deposited 3 times successively. These films were annealed just one time after full deposition. Two another sets of films were prepared with the same sequences but different annealing conditions. The mixed phase of ferro- and anti-ferroelectric phases are existed in films that were annealed at every single deposition. A flat voltage response will be testified by measuring C-V characteristics for these two different films.
Potassium Niobate 단결정의 성장 및 유전적 성질
裵世煥 東亞大學校 附設 基礎科學硏究所 1994 基礎科學硏究論文集 Vol.11 No.1
Growth of the single crystal was possible from nonstoichimetric composition which is more mole percent of the K₂CO₃molecular than the ??. Proper rotation when a KNbO₃single crystal was grown by Czochralski method is 30 rev/min and growing speed is 0.5㎜/hr. The constants in the free energy equation of Gibbs are ??The Curie constant is 2.9333X10℃. Spontaneous polarization is ?? of room temperature. The ferroe-lectric-paraelectric transition of KNbO₃single crystal was proved to be first-order.
裵世煥 東亞大學校 1987 東亞論叢 Vol.24 No.1
Pyroelectric current and dieleclric constant in single crystals of SbSI were measured over temperature range 0℃ and 40℃. And it has been compared p/k and ?? with Liu-Zook relation, which derived from phenomenological theory of Devonshire for ferroelectricity. The Pyroelectric coefficient and dielectric constant were found with 5.8×10⁴μC/㎠˚K and 4.8×10⁴ with a Crie point at 19.7℃. The comparison of p/k and ?? were found agree with Liu-Zook relation.
裵世煥 東亞大學校 1994 東亞論叢 Vol.31 No.1
KLN single crystal films were sucessfully grown with good epitaxy on (0112) sapphire substates by the rf magnetron sputtering technique. The [00l] axis preferably oriented films of KLN were grown at substrate temperature higher than about 600℃. The ordinary refractive index of the film was no=2.26. The TEo mode optical propagation loss in an about 3.0um thick films was 7.9dB/cm at 6328 A.
Sol-Gel법에서 Pb의 농도가 PbZrO<sub>3</sub> 박막 결정에 미치는 영향
배세환,진병문,김성대,Bae, Se-Hwan,Jin, Byung-Moon,Kim, Sung-Dae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.6
The purpose of this study was to find a best condition of fabricating lead zirconate thin film by sol-gel method, especially to find mol ratio and post annealing temperature. Lead zirconate thin film was made by spin coating method. The ratios of Pb and Zr of precursors were 1:0.8, 1:1.0, and 1:1.2. Annealing temperature of films were $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$ for 1 minute. Crystal structure was observed from XRD and antiferroelectricity was observed from hysteresis curves. The optimum mol ratio of Pb:Zr is 1:0.8 and annealing temperature is $800^{\circ}C$.
배세환,채상병 東亞大學校 2000 東亞論叢 Vol.37 No.-
We investigated the effect of oxygen partial pressure and mole fraction of Sr on electrical properties of (Ba, Sr)TiO3 thin films fabricated by the RF sputtering method. We prepared samples with Sr mole fraction [Sr/(Ba+Sr)] of 0.3, 0.5, and 0.7 Oxygen partial pressure [O2/(Ar+O2)] was varied to be 0.2, 0.5, and 0.8, when the films were deposited. The film with the Sr fraction of 0.3 is ferroelectric material, but others are paraelectric materials. As the oxygen partial pressure lowers, the surface morphology of the film gets better and the leakage current gets lower than those prepared at high oxygen partial pressures. the potential barrier of the films is 0.24∼0.52eV, and the dielectric constant is 66∼129 depending on preparation conditions.
TiO₂세라믹을 利用한 MIS Diode의 製作과 電氣的 特性
裵世煥 東亞大學校 1981 東亞論叢 Vol.18 No.1
Metal Insulator Semiconductor diodes were made by utilizing TiO? ceramics. Tunnel field emission is here proposed as a model for rectification in TiO? diode. Measurments of junction depth show very satisfactory agreement with value obtained from the Richardson plot, thus serve as additional supporting evidence of field emission in TiO? ceramic. The measured junction area exceeds by a factor of 10? the value expected by assuming field emission. The Richardson plot show a deviation from the emission theory at low voltage, which is probably due to leakage currents which are present in MIS rutile diode.
Potassium Niobate 단결정의 성장 및 유전적 성질
裵世煥 東亞大學校 1993 東亞論叢 Vol.30 No.1
Growth of the single crystal was possible from nonstoichimetric composition which is more mole percent of the K₂CO₃molecular than the Nb₂O. Proper rotation when a KNbO₃single crystal was grown by Czochralskin method is 30 rev/min and growing speed is 0.5mm/hr. The constants in the free energy equation of Gibbs are α=3.4091X10(T-T), β=-3.2903X10 C.G.S., γ=9.7614X10 C.G.S. The Curie constant is 2.9333X10℃. Spontaneous polarization is 21C/cm²of room temperature. The ferroelectric-paraelectric transition of KNbO₃single crystal was proved to be first-order.