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서지 흡수용 ZnO 바리스터의 I-V/C-V 특성 및 특성 파라미터 추출기법
남춘우,박춘현 東義大學校 産業技術開發硏究所 1999 産業技術硏究誌 Vol.13 No.-
The I-V and C-V characteristics of ZnO varistor consisting of 7-compositions were investigated. A characteristic parameters from I-V characteristics are as follows ; 157.7V/mm for varistor voltage, 3.6V/gb for voltage per grain boundary, 47.11 for nonlinear exponent, 0.36eV and 0.51eV, respectively for activation energy obtained from thermionic emission expression and Fowler-Nordheim tunneling expression. A characteristic parameters from C-V characteristics are as follows ; 1.05×10???/㎤ for donor concentration, 1.2leV for barrier height, 3.46×10???/㎠ for density of interface states, and 657.8Å for depletion width. While the extraction method of various parameters mentioned above was contemplated in detail.
$La_2O_3$가 첨가된 Pr계 ZnO 바리스터의 미세구조와 전기적 특성
남춘우,박춘현 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.11
The effects of $La_2O_3$on the microstructure and electrical characteristics of Pr-based ZnO varistors were investigated. The average grain size increased in the range of 21.9~56.3$\mu$ m with increasing $La_2O_3$additive content(0.0~2.0 mol%). La was, of course grain boundary, largely segregated at the nodal point. As $La_2O_3$additive content increases, threshold voltage and nonlinear coefficient decreased and leakage current increased. In particular, 2.0 mol% $La_2O_3$-added varistor exhibited low threshold voltage 17.0V/mm and nonlinear coefficient of about 6. Based on these results, this varistor can be said to be used as low-voltage varistor, if nonlinear coefficient is somewhat improved forward.
이트리아가 첨가된 프라세오디뮴계 산화아연 바리스터의 안정성에 관한 연구
남춘우,박춘현 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.10
The stability of paraseodymium-based zinc oxide varistor consisting of Zn-Pr-Co-Cr-Y oxide was investigated according to yttria additives under different stress conditons, such as 0.8V\ulcorner\ulcorner/373K/12h and 0.85V\ulcorner\ulcorner/393K/12h. Wholly, all varistor after the stress showed nearly symmetric and stable I-V characteristics. Particularly, in the case of 2.0mol% and 4.0mol% yttria-added varistor showing a good I-V characteristics, the varation rate of varistor voltage were less 1% and that of nonlinear coefficient were about degree of 5%, and what is remarkable, leakage current with increasing stress time during the applied stress was almost constant. It the light of these facts, it is estimated that varistor constituents having 2.0mol% and 4.0mol% yittria, respectively, will be utilized to various application fields.
$Nd_24$O_3$가 첨가된 $Pr_6$$O_{11}$계 ZnO 바리스터의 미세구조 및 전기적 성질
남춘우,박춘현,윤한수 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.3
The microstructure and electrical properties of Pr$_{6}$/O sub 11/-Based ZnO varistors with Nd$_2$O$_3$ was doped in the range of 0.0 to 2.0 mol% were investigated. Most of the added Nd$_2$O$_3$were segregated at the nodal points and grain boundaries and were found to form the Nd-rich phase. In addition the bulk intergranular layer at the grain boundaries and nodal points was consisted of Nd-rich phase and Pr-rich phase. the average grain size was decreased in the range of 7.8 to 5.6${\mu}{\textrm}{m}$ with increasing Nd$_{2}$/O sub 3/ additive content. The nonlinearity of ZnO varistors sintered at 130$0^{\circ}C$ was much more excellent than that at 135$0^{\circ}C$ ZnO varistors doped with 1.0mol% Nd$_{2}$/O sub 3/ exhibited the best nonlinearity. which is 65.2 in the nonlinear exponent and 4.5$\mu$A in the leakage current. Consequently. it is estimated that Pr$_{6}$/O sub 11/ -based ZnO varistors doped with 1.0 mol% Nd$_{2}$/O sub 3/ are to be sufficiently used as basic composition to fabricate good varistors in the future.ure.
ZNR의 미세구조 및 전기적 특성에 $\textrm{WO}_3$가 미치는 영향
남춘우,정순철,박춘현,Nam, Chun-U,Jeong, Sun-Cheol,Park, Chun-Hyeon 한국재료학회 1999 한국재료학회지 Vol.9 No.7
0.5~4.0mol% 범위의 W $O_3$가 첨가된 ZNR의 미세구조 및 전기적 특성이 조사되어졌다. W $O_3$의 대부분은 입제 교차점으로 편석하여 W 과다상을 형성하였으며, 입계 교차점에는 W 과다상(W $O_3$), Bi 과다상(B $i_2$ $O_3$), 스피넬상(Z $n_{2.33}$S $b_{0.67}$ $O_4$) 등 3상이 공존하였다. W $O_3$첨가량이 증가함에 따라 평균 결정입 크기는 15.5~29.9$\mu\textrm{m}$ 범위로 감소하였으며, W $O_3$는 결정입 성장의 촉진제로 작용하였다. W $O_3$ 첨가량이 증가함에 따라 바리스터 전압과 비직선 지수는 각각 186.82~35.87V/mm, 20.90~3.34 범위로 감소하였고, 누설전류는 22.39 ~ 83.01 $\mu\textrm{A}$ 범위로 증가하였다. W $O_3$ 첨가량이 증가함에 따라 장벽높이와 계면상태밀도는 각각 1.93~0.43eV, (4.38~1.22)$\times$$10^{12}$ $\textrm{cm}^2$ 범위로 감소하였으며, 도너 농도는 (1.06~0.38)$\times$$10^{18}$ /㎤ 범위로 감소함에 따라 W $O_3$는 억셉터 첨가제로 작용하였다.다.다. The microstructure and electrical properties of ZNR that W $O_3$ is added in the range 0.5~4.0mol%, were investigated. The major part of W $O_3$ were segregated at the nodal point and W-rich phase was formed. Three crystalline phases, such as W-rich phase (W $O_3$), Bi-rich phase (B $i_2$W $O_{6}$ ), and spinel phase (Z $n_{2.33}$S $b_{0.67}$ $O_4$) were confirmed to be co-existed at the nodal point The average grain size increased in the range 15.5~29.9$\mu\textrm{m}$ with increasing W $O_3$ additive content. Consequently. W $O_3$ acted as a promotion additive of grain growth. As the W $O_3$ additive content increases. the varistor voltage and the nonlinear exponent decreased in the range 186.82~35.87V/mm and 20.90~3.34, respectively, and the leakage current increased in the range of 22.39~83.01 uh. With increasing W $O_3$ additive content, the barrier height and the density of interface states decreased in the range 1.93~0.43eV and (4.38~1.22)$\times$10$^{12}$ $\textrm{cm}^2$, respectively. W $O_3$ acted as an acceptor additive due to the donor concentration increasing in the range (1.06~0.38)$\times$10$^{18}$ /㎤with increasing W $O_3$ additive content.t.t.