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(tb-PMP)<sub>3</sub>Tb-(Ph<sub>3</sub>PO) 단일층 OLEDs의 전기전도 및 발광 특성
문대규,Moon, Dae-Gyu 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.9
We have fabricated single organic layer devices of the organolanthanide complex, terbium tris-(1-phenyl-3-methyl-4-(tertiarybutyry)pyrazol-5-one)triphenylphosphine oxide [$(tb-PMP)_{3}Tb-(Ph_{3}PO)$] for the investigation of its light emission and electrical conduction properties. The thickness of ($(tb-PMP)_{3}Tb-(Ph_{3}PO)$) layer was varied to 60, 75, 95 nm. Mg and Ca layers were used for the cathode contact. The electrical conduction in the $(tb-PMP)_{3}Tb-(Ph_{3}PO)$ single layer devices was dominated by the injection of electrons into the organic layer from the cathode. A higher current density at much lower voltages can be attained with Ca cathode because of the enhanced electron injection. The device shows very sharp emission at 548 nm. The FWHM of the strongest emission peak was 12 nm.
Ba/Ag 투명 음극을 이용한 전면발광 OLEDs의 전기 및 광학적 특성
문대규,이찬재,한정인,Moon, Dae-Gyu,Lee, Chan-Jae,Han, Jeong-Inn 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.9
We have fabricated top omission organic light emitting diodes with transparent Ba/Ag double layer cathodes deposited by using thermal evaporation method. The device structure was $glass/Ni(200nm)/2-TNATA(15 nm)/{\alpha}-NPD(15nm)Al_{q3}:C545T\;(1%,\;35nm)/BCP(5nm)/Ba(10nm)/Ag(8nm)$. The optical transmittance of the Ba(10 nm)/Ag(8 nm) layer was over 60 % in the visible wavelength region. The maximum efficiency of the device was $13.7\;cd/A\;at\;0.69\;mA/cm^{2}$ and the efficiency of over 10 cd/A was achieved at wide range of current densities and luminances.
문대규,Moon, Dae-Gyu 한국진공학회 2014 진공 이야기 Vol.1 No.2
Transparent and top emission organic light-emitting device (OLEDs) are the important issues in realizing new display applications such as see-through electronic displays, and flexible displays. The cathode of the transparent and top emission OLEDs should be transparent in the visible light and should not give any damage to the underlying organic layers, in addition to its intrinsic role of injecting electrons into the organic layers. Several authors have investigated the transparent conducting oxide films prepared by sputtering methods. They have introduced the sophisticated sputtering process for reducing the damages. Other groups have developed thermally evaporated transparent cathodes which are believed to be damage free without causing any permanent defect to the organic layers. This review focuses on the vacuum evaporated damage free transparent cathodes.
Rubrene 도핑층을 이용한 백색 OLEDs의 전기 및 광학적 특성
문대규,이찬재,한정인,Moon, Dae-Gyu,Lee, Chan-Jae,Han, Jeong-In 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.1
We have fabricated organic white light emitting diodes by mixing two colors from very thin rubrene doped and non-doped DPVBi layers. The device structure was ITO/2-TNATA(15 nm)/${\alpha}$-NPD(35 nm)/DPVBi:rubrene(5 nm)/DPVBi(30 nm)/$Alq_{3}(5\;nm)$/BCP(5 nm)/LiF(0.5 nm)/Al(150 nm). The yellow-emitting rubrene of 0.7 wt % was doped into the blue-emitting DPVBi host for the white light. CIE coordinate of the device was (0.31, 0.33) at 8 V. The color coordinates were stable at wide ranges of driving voltages. The luminance was over $1,000\;cd/m^{2}$ at 8 V and increases to $14,500\;cd/m^{2}$ at 12 V. The maximum current efficiency of the device was 8.2 cd/A at $200\;cd/m^{2}$.
New ETL 층에 의한 저전압 구동 백색 발광 OLED
문대규,Moon, Dae-Gyu 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.3
We have developed low driving voltage white organic light emitting diode with a new electron transport material, triphenylphosphine oxide ($Ph_{3}PO$). The white light emission was realized with a rubrene yellow dopant and blue-emitting DPVBi layer. The new electron transport layer results in a very high current density at low voltage, resulting in a reduction of driving voltage. The device with a new electron transport layer shows a brightness of $1150\;cd/m^2$ at a low driving voltage of 4.3 V.
CsCl 보호막을 이용한 전면발광 OLED의 전기 및 광학적 특성
김소연,문대규,한정인,Kim, So-Youn,Moon, Dae-Gyu,Han, Jeong-In 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.2
We have developed the transparent passivation layer for top emission organic light emitting diodes using CsCl thin film by the thermal evaporation method. The CsCl film was deposited on the Ca/Ag semitransparent cathode. The optical transmittance of Ca/ Ag/CsCl triple layer is higher than that of Ca/Ag double layer in the visible range. The device with a structure of glass/Ni/2-TNATA/a-NPD/Alq3:C545T/BCP/Alq3/Ca/Ag/CsCl results in higher efficiency than the device without CsCl passivation layer. The device without CsCl thin film shows a current efficiency of 7 cd/A, whereas the device passivated with CsCl layer shows an efficiency of 10 cd/A. This increase of efficiency isresulted from the increased optical extraction by the CsCl passivation layer.
전자수송층과 발광층 사이의 Ph<sub>3</sub>PO 혹은 BCP가 유기발광다이오드의 구동전압에 미치는 영향
하미영,문대규,Ha, Mi-Young,Moon, Dae-Gyu 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.8
We have investigated the effect of organic thin film on the driving voltage of OLED (organic light emitting diode) by inserting a 5 nm thick 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or triphenylphosphineoxide ($Ph_3PO$) between tris-(8-hydroxyquinoline)aluminum ($Alq_3$) electron transport layer and 4,4'-bis(2,2'-diphyenylvinyl)-1,1'-biphenyl (DPVBi) emission layer. The device with 5 nm thick $Ph_3PO$ layer exhibited higher maximum current efficiency and lower driving voltage than the device with BCP layer, resulting from better electron injection from $Alq_3$ to DPVBi in the device with $Ph_3PO$ layer.
단일 호스트를 이용하여 선택적으로 도핑된 OLEDs의 전기 및 광학적 특성
서유석,문대규,Seo, Yu-Seok,Moon, Dae-Gyu 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.2
We have fabricated organic white light emitting device by two colors from yellow fluorescence material (5,6,11,12)-Tetraphenylnaphthacene(Rubrene) and blue phosphorescent material (iridum-bis(4,6-difluorophenylpyridinato-N,C2)-picolinate(FIrpic). The threshold voltage is 5.3 V, and the brightness reaches 1000 cd/$m^2$ at 11 V, 14.5 mA/$m^2$. The color of the light corresponds to a CIE coordinate of (0.30, 0.38). The highest efficiency of the device can reach 9.5 cd/A or 5.5 lm/W at 6 V, 0.1 mA/$m^2$.