http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
류인식,이석수,이종현 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1
A pH-ISFET using intrinsic 1μm thick Si on sapphire(SOS) has been fabricated to improve the encapsulation process for pH-meters. The ratios of the gate L/W for the ISFET were 20μm/400μm and 20μm/100μm. The source of the ISFET was designed to be electrically common with the top Si layer which was isolated by KOH etching. All diffusion sources were spin-on-dopants for p-well and n-source/n-drain. The gate of the ISFET was formed with the triple dielectric layers of 500Å thick SiO_(2)/700Å thick PECVD silicon nitride/500Å thick Ta_(2)O_(5). The Ta_(2)O_(5) layer was deposited by RF reactive sputtering after 'lift-off photolithography following Al patterning and thermally treated at 400 C in O_(2) to enhance its pH-sensitivity. The I-V characteristic of the MISFET without Ta_(2)O_(5) layer was stable and showed no kink effect, Its threshold voltage was typically -3.2 Volts. As the MISFET/ISFET was fully isolated on a sapphire substrate which had good dielectric property, the current leak probrems through the wafer cut-off surface were completely removed. The islands of the MISFET and the ISFET are electrically isolated from each other, which eliminates a silicon substrate bias effect.
전해도금법을 이용한 3 차원 미세 인덕터와 변압기의 제조
이종현,류인식,김이영,조백희,조찬섭 경북대학교 전자기술연구소 2001 電子技術硏究誌 Vol.22 No.2
This work was related to fabricated 3-dimensional device for need of micro-device in developing new intelligence age. This device was fabricated by electroplating used electroplating-PR and high-vacuum evaporation of metal. It consists of air-bridge on electroplating rod and electroplated core. Electroplating material is used Pb/Sn and Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. Thus, Leakage current is very low than other isolation layer as silicon-dioxide. The most advantage of 3-dimensional micro-inductor/micro-transformer compared to flat-inductor is a possibility that can fabricate high-permeability device with core and a ultra-high integration-rate than other 2-dimensional device.
족삼리(足三里) 침자(鍼刺)가 위운동(胃運動)에 미치는 영향(影響)에 관한 신경학적(神經學的) 관찰(觀察)
황우준,류인식,Hwang, Woo-Jun,Ryu, In-Sik 대한침구의학회 2000 대한침구의학회지 Vol.17 No.1
To investigate the acupuncturing function of $ST_{36}$(足三里) on the gastric activity, four different treatment methods such as intact, local anesthesia, ligation and nerve dissection were implemented. Followings are the results from the present study. 1. When a simple acupuncture with intact, the stomach motility and frequency were increased without significance compared with control. 2. Under local anesthesia on femoral region, the stomach motility and frequency showed no such changes compared with control. 3. With ligation of femoral region, the stomach motility and frequency were decreased significantly compared with control. 4. When the siatic nerve was dissected, the stomach motility and frequency showed no such changes compared with control. Overall, the effect of acupuncture on the $ST_{36}$(足三里) was very closely related with the condition of surrounding area. It is assumed that further studies should be done for the investigation of mechanism behind the acupuncturing function in conjunction with the nervous system.
이종현,류인식 경북대학교 전자기술연구소 1992 電子技術硏究誌 Vol.13 No.1
A MISFET using intrinsic 1㎛ thick Si on sapphire(SOS) has been fabricated for the application to ISFET. The ratios of the gate L/W for the MISFET were 20㎛/400㎛ and 20㎛/100㎛. The source of the MISFET was designed to be electrically common with the top Si layer which was completely isolated from each MISFET by the MESA etching. The gate of the MISFET was formed with the double dielectric layers of 500A thick SiO₂/700Å thick PECVD silicon nitride. The I-V characteristic of the MLSFET was stable and showed no kink effect. Its threshold voltage was typically -3.2 Volts. As the MISFET was fully isolated on a sapphire substrate which had naturally good dielectric property, the current leak problem through the wafer cut-off surface was completely removed.