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High Performance Solution-processed WSe₂ Transistors
Yong-Young Noh(노용영) 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.2
Two-dimensional (2D) transition-metal dichalcogenides (TMDC) is considered as one of the promising candidates for next-generation optoelectronics. Among chemical vapor deposition (CVD), mechanical exfoliation, solution-phase chemical synthesis, liquid-phase exfoliation (LPE), and intercalation-based exfoliation methods, the solution-processable method for synthesizing 2D nanosheets offers significant potential in thin-film electronics for large-area flexible and wearable devices. Solution-processed n-type transistors (MoS₂) have reached high mobility of over 10cm² V<SUP>-1</SUP> s<SUP>-1</SUP>. However, the performance for the solution-processed p-type 2D transistor is still inferior. Here, we demonstrate that high performance solution processed WSe₂ transistors. The optimized WSe₂ transistor exhibits increased mobility up to 30 cm² V<SUP>-1</SUP> s<SUP>-1</SUP> from bare devices with relatively low mobility of 10<SUP>-6</SUP> cm² V<SUP>-1</SUP> s<SUP>-1</SUP>. Especially, the high on/off ratio of the solvent-treated WSe₂ transistor increased to over 10<SUP>6</SUP> from 10⁴. We will present details how we achieve high performance in the conference.
AAO 템플레이트을 이용한 균일한 공액고분자 나노와이어
노용영 ( Yong Young Noh ),김동윤 ( Dong Yoon Khim ),김동유 ( Dong Yu Kim ) 한국화학공학회 2014 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.52 No.2
본 논문에서는 유기전자소자의 반도체 물질로 많이 사용되는 poly(9,9-dioctylflurorene) (PFO), poly(9,9-dioctylfluoreneco-benthiadiazole) (F8BT), (regioregular poly(3-hexylthiophene) (P3HT)를 기반으로 하는 균일한 크기와 특성을 가지는 고분자 나노와이어를 AAO 템플레이트를 이용하여 대량으로 제작하였다. 제작된 나노와이어는 결점이 없이 깨끗한 표면을 보였으며, 약 250~300 nm의 지름과 ~30 μm의 일정한 길이를 가지고 있었다. 나노와이어들은 스프레이 분사 방법을 통하여 유리 기판 위에 균일하게 분사할 수 있었으며, PFO와 F8BT 나노와이어의 경우 UV 빛의 조사하에 각각 나노와이어의 전체에 걸쳐서 왜곡없이 밝은 yellow와 blue luminescence를 보였다. Here, we reported mass-produced organic nanowires with uniform sizes based on poly(9,9-dioctylflurorene)(PFO), poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), (regioregular poly(3-hexylthiophene) (P3HT) which are well known as organic semiconductors for op to/electronics applications, using a melt-assisted wetting method with anodic alumina membrane. The conjugated polymer nanowires showed uniformed diameters (D=250~300 nm) and lengths (L=~30 μm) with defect free smooth surface regardless of a kinds of semiconductors. In addition, the nanowires were uniformly deposited onto glass substrates by spray-coating method. Under the UV light irradiation, PFO and F8BT nanowires showed blue and yellow emissions, respectively.
p-Type Organic Thin Film Transistors Based on Biphenyl and Fluorene End-Capped Fused Bithiophenes
Noh, Yong-Young,Kim, Dong-Yu,Shim, Hong-Ku,Lim, Eunhee,Jung, Byung-Jun 한국공업화학회 2004 응용화학 Vol.8 No.2
We report on high performance and stable novel p-type active oligomers for organic thin film transistors based on a structural combination of fused bithiophene with fluorene or biphenyl unit. A higher field-effect mobility and device stability after UV irradiation was achieved with biphenyl end-capped fused bithiophene (BPTT) than the fluorene end-capped derivative (BFTT). Moreover, it is noteworthy that both molecules, especially BPTT, showed a high performance, almost the same or a slight decrease in field effect mobility and I_(ON)/T_(OFF), even after they were kept under ambient conditions for more than one month.