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8인치 Si Power MOSFET Field Ring 영역의 도핑농도 변화에 따른 전기적 특성 비교에 관한 연구
김권제,강예환,권영수,Kim, Gwon Je,Kang, Ye Hwan,Kwon, Young-Soo 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.4
Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.
500 V 급 Planar Power MOSFET의 P 베이스 농도 변화에 따른 설계 및 특성 향상에 관한 연구
김권제,강예환,권영수,Kim, Gwon Je,Kang, Ye Hwan,Kwon, Young-Soo 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.4
Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as $8.25{\mu}m$ cell pitch and $4.25{\mu}m$ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.