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Josephson Vortex Dynamics in Tilted Magnetic Fields
진용덕,기동근,이후종,Jin, Yong-Duk,Ki, Dong-Keun,Lee, Hu-Jong The Korean Superconductivity Society 2008 Progress in superconductivity Vol.9 No.2
We report on the Josephson vortex dynamics in $Bi_2Sr_2CaCuO_{8+\delta}$ natural Josephson junctions by c-axis tunneling measurements. Beside the quasiparticle branches in the current-voltage characteristics, a new set of multiple branches, referred to as Josephson-vortex-flow branches (JVFBs), are observed. The JVFBs emerge in an in-plane magnetic field above $H_0\;=\;{\Phi}_0/{\gamma}s^2$ and show highly hysteretic behavior, which can be explained in terms of the recently proposed dynamic-phase-separation model. In this work we examined the effect on the JVFBs by the presence of pancake vortices generated as the external magnetic field was applied slightly tilted from the in-plane direction. JVFBs were found to become larger and prominent with increasing pancake vortex density as the tilt angle increased, which were presumably caused by slowing down of a Josephson vortex lattice in the presence of pancake vortices.
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Observation of Single-Electron Transport in a Zn0.8Mg0.2O/ZnO Coaxial Heterostructure Nanorod
이후종,정동찬,기동근,배명호,이철호,유진경,이규철 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
Coaxial Zn0.8Mg0.2O/ZnO hetrostructure semiconducting nanorods with different band gaps were fabricated on oxide-layer-covered Si substrates by using catalyst-free metal-organic vapor-phase epitaxy. The electrical conduction of nanorods with Ti/Au Schottky-contact electrodes, taken at various temperatures down to 50 mK, revealed a Coulomb-blockade behavior, pointing a multiple quantum-dot structure existing in the ZnO nanorod core or in the Zn0.8Mg0.2O cylindrical shell over a wide range of gate voltages. These characteristics, transformed into single-dot ones at high positive gate voltages. This study conrms, by electrical conduction measurements, the formation of a coaxial heterojunction structure between materials of two different band gaps and provides a possibility for utilizing the structure for three-terminal device applications.
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