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EPW 용액에서의 실리콘 양극 산화막 형성에 관한 연구
부종욱(J. U. Bu),김선미(S. M. Kim),김승희(S. H. Kim),김성태(S. T. Kim),권숙인(S. I. Kwon) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
Si 이방성 에칭 용액인 EPW(Ethylenediamine, Pyrocatechol, Water) 용액내에서 potentiostat를 이용한 cyclic polarization 방법으로 양극 산화막의 연구를 수행하였다. p-Si 및 n-Si에서 양극 산화막의 breakdown potential은 동일한 값을 보였으며, p^+-Si의 경우에는 양극 산화막의 breakdown이 일어나지 않았다. 산화막의 XPS 분석결과 n-Si과 p-Si의 경우 Si 2p photopeak의 chemical shift는 각각 Δ3.62eV, Δ3.55eV였으며, p^+-Si의 경우에는 Δ4.25eV였다. 따라서 p^+-Si의 양극 산화막이 light doping의 경우와 비교하여 커다란 에칭 저항성을 보이는 것은 산화막의 화학적 조성 차이에 기인하는 것이라 생각된다. p^+-Si이 에칭 용액내에서 anodic bias 상태에 놓이게 되면 boron이 표면으로 diffuse-out되는 것을 SIMS 분석을 통해 알 수 있었는데, 그 원인은 아직 분명하지는 않지만, 이것은 실제, etch-stop이 일어나는 임계 boron 농도가 일반적으로 알려진 값보다 훨씬 높을 것이라는 것을 시사한다. We have studied the anodic oxidation of silicon in the anisotropic etchant of EPW(Ethylenediamine, Pyrocatechol and Water) solution using the cyclic polarization technique. The samples have been characterized by means of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The results of cyclic polarization experiments show that the anodic oxides formed on p- and n-type silicon wafers break down at the same potential while breakdown does not occur up to open circuit potential in the case of p^+ -Si. Strong etch-resistance of p^+-Si sample is believed to be related with the formation of strong Si-O bonding, as observed with XPS. SIMS depth profiles suggest that the critical concentration of boron for etch-stop to occur appears to be much higher than what is widely believed.
김용환(Y. H. Kim),송진헌(J. H. Song),권숙인(S. I. Kwon),전채홍(C. H. Jeon),박기성(K. S. Park),김승태(S. T. Kim) 대한기계학회 2001 대한기계학회 춘추학술대회 Vol.2001 No.8
High temperature brazing with nickel-based filler metal was carried out to study the high temperatuer brazing behavior of superalloys. Both additive metal(IN 738) and the filler metals(AMDRY DF-4B and AMS 4778) were provided in a from of mixed with gas atomized powders and organic binder. This brazing paste was inserted into the gap between the joining parts, and a pressure of 0.05 to IMPa was applied to joining parts. The brazing process was conducted in vacuum furnace under2×10??torr. The microstructure and porosity of the brazed area were characterised by SEM, EDX and image analyser. The Cr borides with a blocky morphology were presents in the matal braged with DF-4B filler metals. Ni-Ni₃B eutectic phase was observed in both filler metals. The area braged with DF 4B exhibited much higher porosity than the one with AMS 4778. the pressure of 0.1-0.4MPa was found to produce lower porosity.