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권성렬,이현창,이규대,Kwon, Sung-Yeol,Lee, Hyun-Chang,Lee, Kyu-Tae 한국인터넷방송통신학회 2018 한국인터넷방송통신학회 논문지 Vol.18 No.3
본 논문에서는 센서 신호를 전류형태로 수신할 때 유리한 노튼 증폭기에서 전류 입력 시 발생하는 문제점을 분석하고 이를 개선하기 위한 회로를 제시하였다. 출력전압이 일정하게 유지되는 특성을 지닌 연산 증폭기로 구성된 버퍼회로의 출력을 전류의 입력단으로 활용하고, 이 때 버퍼회로에 흐르는 전원전류를 감지해 전류 입력단에서 유입되는 전류를 추출하도록 구성하였다. 제시한 회로의 성능을 확인하기 위해 회로를 구성하고 실험용 전류를 입력했을 때 나타나는 결과를 확인하였으며, 동일한 조건을 노튼 증폭기에 적용했을 때의 결과와 비교하였다. 비교 결과 기존의 노튼 증폭기에서 문제가 되었던 입력 오프셋 전압이 제시한 회로에서는 0V로서 제거되었고, 입력전류에 대한 출력전압의 평균오차는 무려 4.755%로 크게 줄어드는 등 전체적인 특성이 크게 향상되었음을 확인하였다. In this paper, an improved Norton amplifier is proposed and the problems caused by the current input in the Norton amplifier, which has advantages in current transmission, are analyzed. The output of the voltage follower consisting of an operational-amplifier with constant output voltage characteristics is used as an input terminal of the proposed circuit. It is configured to detect the power supply current passing through the voltage follower and extract the current from the input terminal. The performance of the improved Norton amplifier is verified at experiment according to the input current. The results are compared with conventional Norton amplifier. Consequently, the input offset voltage, which is a problem in the conventional Norton amplifier, was removed in the proposed circuit. In addition, the average error of the output voltage with respect to the input current was reduced to 4.755%. It is verified that the characteristics of the proposed circuit are improved.
P ( VDF / TrFE ) 필름을 이용한 초전형 적외선 센서의 제작 및 특성
권성렬(Sung Yeol Kwon),김기완(Ki Wan Kim) 한국센서학회 1999 센서학회지 Vol.8 No.3
Pyroelectric infrared sensors have been fabricated using P(VDF/TrFE) film with pyroelectric effect. The weight percent and thickness of the poled P(VDF/TrFE) film are 75/25 percent and 25 fan respectively. For easier fabrication and connection method new top and bottom electrodes design was adapted for human body detecting pyroelectric infrared sensor. An aluminum infrared absorption electrode and bottom electrode were deposited by thermal evaporator. And the device was mounted in TO-5 housing to detect infrared light of 5.5 - 14 um wavelength. The responsibility, NEP (noise equivalent power) and specific detectivity D` of the device were 9.62 X 105 V/W, 3.95 X 10` W and 5.06 X 10?cm/W under emission energy of 13 ~ W/cmz respectively
PERL ( passivated emitter and rear locally - diffused cell ) 방식을 이용한 고효율 Si 태양전지의 제작 및 특성
김우현 ( Woo Hyun Kim ),권오준 ( Oh Joon Kwon ),남기홍 ( Ki Hong Nam ),김기완 ( Ki Wan Kim ),권성렬 ( Sung Yeol Kwon ),정훈 ( Hun Jeoung ),김영우 ( Yeung Woo Kim ),배승춘 ( Seung Chun Bae ),박성근 ( Sung Keoun Park ) 한국센서학회 1999 센서학회지 Vol.8 No.3
The n^+/p/P^+ junction PERL solar cell of 0.1∼2 Ω·cm (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM(air mass)1.5, 100 mW/㎠ I_(sc), V_(oc), fill factor and the conversion efficiency were 43mA. 0.6 V, 0.62. and 16% respectively.
TFELD 절연층을 위해 ITO glass 위에 증착시킨(Ba0.5,Sr0.5)TiO3 박막의 특성
권성렬,배승춘,박성근,김기완,김정환,최병진,남기홍 한국센서학회 2000 센서학회지 Vol.9 No.1
BST thin films were deposited on the ITO coated glass for using TFELD insulating layer by rf magnetron sputtering method: O₂/(Ar+O₂) mixing ratio was 10 %, substrate temperature was changed from R.T. to 500 ℃, and working pressure was changed from 5 mTorr to 30 mTorr. BST thin films deposited with various conditions were investigated electrical, optical, structural properties, and stoichiometry. The result of investigation was achieved good fabrication condition that substrate temperature of 400 ℃, and working pressure of 30 mTorr. Relative dielectric constant of 254 at 1 kHz, leakage current density was below 3.3 X 10^(-7) A/㎠ at 5 MV/cm applied electric field, and transmittance was over 82 % at visible range.
초전형 적외선 센서용 P(VDF/TrFE) 막의 분극에 따른 유전특성의 변화
권성렬,김영우,배승춘,박성근,김기완 한국센서학회 2000 센서학회지 Vol.9 No.1
Dielectric characteristics of P(VDF/TrFE) film manufactured using spin coating technique have been investigated. To improve the crystallinity and quality of film, the film was three step annealed. Simple etching process and conditions for P(VDF/TrFE) film were established using top electrode as a mask. Poling is performed by several steps. 1.87 ㎛ thick P(VDF/TrFE) films were obtained with conditions such that the solution of 10 wt% concentration was spun at 3000 rpm for 30 seconds. Before poling, dielectric constant and dielectric loss of P(VDF/TrFE) film were 13.5 and 0.042, respectively. After poling, dielectric constant and dielectric loss of P(VDF/TrFE) film were 11.5 and 0.037, respectively.
PERL (Passivated Emitter and Rear Locally-Diffused Cell) 방식을 이용한 고효율 Si-Solar Cell의 제작 및 특성
정훈,김영우,배승춘,김정환,권성렬,김기완 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
The solar cell producing the highest efficiency is the PERL( Passivated Emitter, Rear Locally-Diffused Cell) developed at the University of New South Wales, Australia. Silicon n^(+)/p/p^(+) junction PERL solar cell was fabricated through the following steps,: wafer cutting, inverted pyramidally textured surfaces etching by KOH, Phosphorus diffusion, anti-reflection coating application, grid formation and contact annealing. The cell area was 1cm^(2) and under the AM(air mass)1.5. For PERL solar cell with inverted pyramidally textured, its conversion efficiency was about 17.1%. The efficiency of cell without textured surface was 13.8%. When adapting textured surface to the cell, the efficiency has been improved .