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권무현 한국유변학회 1995 Korea-Australia rheology journal Vol.7 No.3
전기장 하에서 폴리아닐린/미네랄 오일 현탁액의 유변학적 특성에 관한 실험적인 연 구를 큐엣 셀 형태의 레오미터를 사용하여수행하였다. 폴리아닐린 현탁액은 전기장을 가해 줄 때 점도가 크게 상승하는 현상을 보였고 부피분율과 전기장의 3/2승에 비례하는 동적 항 복응력을 나타내었다. 작은 변형 진폭의 동적 상태 실험을 통하여 저장계수와 손실계수를 변형진폭, 변형의 구동 주파수 및 전기장의 함수로 나타내었다. 저장계수는 전기장을 증가시 킬 때 증가하나 손실계수(5wt%)는 약한 전기장 의존성을 보였다. 낮은 응력을 가해줄때의 크립과 회복곡선은 초기의 순간적인 변형 증가와 지연되는 변형 그리고 회복 불가능한 영구 적 변형으로 구성되어진다. 탄성 한계 항복응력은 전기장의 세기가 증가함에 따라 증가하였 다. 매우 작은 변형에서는 응력과 변형사이의 선형적 관계를 보여 고체와 유사한 거동을 나 타내었다.
Stability of Bulk Heterojunction Organic Solar Cells with Different Blend Ratios of P3HT:PCBM
권무현 한국전기전자재료학회 2012 Transactions on Electrical and Electronic Material Vol.13 No.2
I studied the stability of organic photovoltaic cells in terms of P3HT:PCBM-71 blend ratio as a function of storage time. I obtained the best cell performance by optimizing the blend ratio of electron donor and electron acceptor within the active layer. In this study, I found that the more the P3HT:PCBM ratio increases within the active layer, the more the cell efficiency decreases as the storage time increases. As a result, the best optimized blend ratio was the 1:0.6 ratio of P3HT:PCBM-71, and cell efficiency of the device with the 1:0.6 blend ratio was 4.49%. The device with the best cell efficiency showed good stability.
브로민화 수은 (I)(Hg2Br2) 물리적 증착공정에서 온도농도대류의 기초연구
김극태,권무현 한국결정성장학회 2023 한국결정성장학회지 Vol.33 No.3
During the Hg₂Br₂ physical vapor transport process, with increasing the partial pressure of component B, PB from 40 Torr to 200 Torr, a unicellular convective flow structures move from the crystal growth region to the center region in the vapor phase. The boundary layer flow is dominant for PB = 40 Torr, and the core region flow is dominant for PB = 200 Torr. The flow in the vapor phase shows a three-dimensional convective flow structure with a single cell (unicellular) for PB = 40 Torr and 200 Torr, exhibits an asymmetrical flow with respect to the x, y central axis under the horizontally oriented configuration with an aspect ratio (length-to-width) of 3 and linear conducting walls. The critical temperature difference between the source and crystal region is about 30 K. The total molar flux of Hg₂Br₂ increases with the temperature difference until the total molar flux reaches the critical value. At the critical total molar flux, the total molar flux abruptly decreases. 브로민화 수은 (I)(Hg₂Br₂) 물리적 증착법 공정에서 구성요소 B의 분압 , PB를 40 Torr에서 200 Torr로 증가시켰을때 1개의 셀(unicell)이 결정성장영역에서 기체상 공간의 중심으로 이동함을 보여주고 있다. PB =40 Torr에서는 경계층 흐름이 지배적이고, PB =200 Torr에서는 코어영역흐름 (core region)을 보이고 있다. 고려되는 물리적 증착법 공정에서 PB =40 Torr와 PB =200Torr에서 1개(single)의 셀(cell) 형태로 3차원의 유동의 흐름과 x, y 직교 중심축에 대하여 비대칭 유동흐름을 나타내고 있다. 소스와 결정 영역 사이의 임계 온도차는 약 30K입니다. Hg₂Br₂의 총 몰 플럭스는 임계값에 도달할 때까지 온도차에 따라 증가한다. 임계 총 몰 플럭스에서 총 몰 플럭스는 갑자기 감소한다.
김정식,권무현,최정길,양장수,김극태 한국공업화학회 2000 응용화학 Vol.4 No.1
The aluminum oxide thin films have been deposited on PET substrate film using r.f. magnetron sputtering from an aluminum oxide magnetron target and argon plasma. The electronic structures of aluminum oxides have been examined using XPS. The XPS spectrum for the aluminum oxide showed the presence of a well resolved Al 2p spectral line at 74.3±0.2 eV (FWHM=∼2.1). Depending on synthetic conditions, the binding energies of A1 2p and O 1s for samples used in the current study are same, or very similar. The average ratio of Oo/Al for all the aluminum oxides was 2.8, indicating that the deviation from the stoichiometric atomic ratio of 1.5 in Al₂O₃ is accounted for by the incomplete oxidation. Given the reference energies of 531.0 eV for O 1s and 72.7 eV for Al 2p, the Al 2p peak tended to shift to higher energies while the O 1s peak shifted to lower energies. During the synthesis of aluminum oxide thin films, there was a correlation between the preparative conditions and the relative intensity for the Al 2p and O 1s peak. The peak intensities of Al 2p and O 1s were increased with increasing the sputtering power as well as the sputtering time. These results indicate that there was a linear relationship between the peak intensities of Al 2p and O 1s and the sputtering power.
김정식,권무현,최정길,양장수,김극태,서덕종 한국공업화학회 2000 응용화학 Vol.4 No.1
Rheology of three natural lacquers, Korea, China and Japan has been studied for the storage(G' ) and loss(G") Young's modulus shear velocity of viscosity. The storage(G' ) and loss(G") Young's modulus of all lacquers are increased with increasing a frequency. The slope of storage(G') and loss(G") Young's modulus for the Japan were greater than the Korea and the Chinaby by a factor of 3. The viscosity is non-linearly decreased with increasing the shear velocity in the range of 0.01∼30, which indicates non-Nowton fluid with the shear thinning. The behaviors of shear thinning for the Korea and the China appear clearly in comparison with the Japan. This might be intimately related to the degree of purity of the laquer. The Japan has a higher purity than the Korea and the China.
김극태,권무현 한국결정성장학회 2004 韓國結晶成長學會誌 Vol.14 No.4
We investigate the effects of solutal convection on the crystal growth rate in a horizontal configuration for diffusive-convection conditions and purely diffusion conditions achievable in a low gravity environment for a nonlinear thermal gradient. It is concluded that the solutally-driven convection due to the disparity in the molecular weights of the component A (Hg2Br2) and B (CO) is stronger than thermally-driven convection for both the nonlinear and the linear thermal profiles, corresponding to Grt = 8.5?03, Grs = 1.05?05. For both solutal and thermal convection processes, the growth rates for the linear thermal profile (conducting walls) are greater than for the nonlinear case. With the temperature humps, there are found to be observed in undersaturation for diffusive-convection processes ranging from DAB = 0.087 to 0.87. For the vertical configurations, the diffusion mode is so much dominated that the growth rate and interfacial distribution is nearly regardless of the gravitational accelerations. Also, the diffusion mode is predominant over the convection for the gravity levels less than 0.1 g0 for the horizontally oriented configuration.