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이봉섭,고신위,박종억,백용구,양재웅,백경갑,주성후,Lee, Bong-Sub,Gao, Xin-Wei,Park, Jong-Yek,Baek, Yong-Gu,Yang, Jae-Woong,Paek, Kyeong-Kap,Ju, Sung-Hoo 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.6
In this paper, the hole injection layer(HIL) materials have been synthesized and analyzed. Their HOMO levels are $4.93{\sim}5.22\;eV$, and their energy band gaps are $2.74{\sim}3.19\;eV$. Their glass transition temperatures($T_g$) are all above $114^{\circ}C$, which implies that they are highly thermal-stable. The green OLED devices with a structure of ITO(150 nm)/NEW_HIL(50 nm)/NPB(30 nm)/$Alq_3$(50 nm)/Al:Li(100 nm) were fabricated and tested, incorporating these newly synthesized HIL materials. According to the test results of OLED devices, the I-V-L performances of these devices increase in the following sequence: ELM307 > ELM200 > ELM321 > ELM327 > ELM325. In addition, the OLED device with ELM307 as a HIL has the highest brightness and efficiency at the same driving voltage. These experimental results have shown that ELM307 can be used as one of the most promising candidates for HIL materials.