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열처리 시 S/Se 분말 비율에 따른 Cu<sub>2</sub>ZnSnSe<sub>4</sub> (CZTSSe) 박막의 합성 및 특성 평가
강명길,홍창우,김진혁,Gang, Myeng Gil,He, Ming Rui,Hong, Chang Woo,Kim, Jin Hyeok 한국태양광발전학회 2014 Current Photovoltaic Research Vol.2 No.4
$Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) absorber thin films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu precursor thin films. The Zn-Sn-Cu precursor thin films were sulfo-selenized inside a graphite box containing S and Se powder using rapid thermal processing furnace at $540^{\circ}C$ in Ar atmosphere with pre-treatment at $300^{\circ}C$. The effect of different S/Se ratio on the structural, compositional, morphological and electrical properties of the CZTSSe thin films were studied using XRD (X-ray diffraction), XRF (X-ray fluorescence analysis), FE-SEM (field-emission scanning electron microscopy), respectively. The XRD, FE-SEM, XRF results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the S/Se composition ratio. In particular, the CZTS thin film solar cells with S/(S+Se)=0.25 shows best conversion efficiency of 4.6% ($V_{oc}$ : 348 mV, $J_{sc}$ : $26.71mA/cm^2$, FF : 50%, and active area : $0.31cm^2$). Further detailed analysis and discussion for effect of S/Se composition ratio on the properties CZTSSe thin films will be discussed.
열처리 시 S/Se 분말 비율에 따른 Cu₂ZnSnSe₄ (CZTSSe) 박막의 합성 및 특성 평가
강명길(Myeng Gil Gang),Ming Rui He,홍창우(Chang Woo Hong),김진혁(Jin Hyeok Kim) 한국태양광발전학회 2014 Current Photovoltaic Research Vol.2 No.4
Cu₂ZnSn(SxSe1-x)₄ (CZTSSe) absorber thin films were prepared on Mo coated soda lime glass substrates by sulfoselenization of sputtered stacked Zn-Sn-Cu precursor thin films. The Zn-Sn-Cu precursor thin films were sulfo-selenized inside a graphite box containing S and Se powder using rapid thermal processing furnace at 540°C in Ar atmosphere with pre-treatment at 300°C. The effect of different S/Se ratio on the structural, compositional, morphological and electrical properties of the CZTSSe thin films were studied using XRD (X-ray diffraction), XRF (X-ray fluorescence analysis), FE-SEM (field-emission scanning electron microscopy), respectively. The XRD, FE-SEM, XRF results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the S/Se composition ratio. In particular, the CZTS thin film solar cells with S/(S+Se)=0.25 shows best conversion efficiency of 4.6% (Voc : 348 mV, Jsc : 26.71 mA/cm², FF : 50%, and active area : 0.31 cm²). Further detailed analysis and discussion for effect of S/Se composition ratio on the properties CZTSSe thin films will be discussed.
Cu층 증착시간에 따른 Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) 박막의 특성
김윤진,김인영,강명길,문종하,김진혁,Kim, Yoon Jin,Kim, In Young,Gang, Myeng Gil,Moon, Jong Ha,Kim, Jin Hyeok 한국태양광발전학회 2016 Current Photovoltaic Research Vol.4 No.1
$Cu_2ZnSnS_4$ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with $V_{oc}$ of 570 mV, $J_{sc}$ of $18.15mA/cm^2$ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.
황화 열처리 온도에 따른 Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> 박막의 합성 및 특성 평가
유영웅,홍창우,강명길,신승욱,김영백,문종하,이영종,김진혁,Yoo, Yeong Yung,Hong, Chang Woo,Gang, Myeng Gil,Shin, Seung Wook,Kim, Young Baek,Moon, Jong-Ha,Lee, Yong Jeong,Kim, Jin Hyoek 한국재료학회 2013 한국재료학회지 Vol.23 No.11
$Cu_2ZnSn(S_x,Se_{1-x})_4$ (CZTSSe) thin films were prepared by sulfurization of evaporated precursor thin films. Precursor was prepared using evaporation method at room temperature. The sulfurization was carried out in a graphite box with S powder at different temperatures. The temperatures were varied in a four step process from $520^{\circ}C$ to $580^{\circ}C$. The effects of the sulfurization temperature on the micro-structural, morphological, and compositional properties of the CZTSSe thin films were investigated using X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The XRD and Raman results showed that the sulfurized thin films had a single kesterite crystal CZTSSe. From the FE-SEM and TEM results, the $Mo(S_x,Se_{1-x})_2$ (MoSSe) interfacial layers of the sulfurized CZTS thin films were observed and their thickness was seen to increase with increasing sulfurization temperature. The microstructures of the CZTSSe thin films were strongly related to the sulfurization temperatures. The voids in the CZTSSe thin films increased with the increasing sulfurization temperature.
신승욱,한준희,강명길,윤재호,이정용,김진혁,Shin, Seung-Wook,Han, Jun-Hee,Gang, Myeng-Gil,Yun, Jae-Ho,Lee, Jeong-Yong,Kim, Jin-Hyeok 한국재료학회 2012 한국재료학회지 Vol.22 No.5
Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.
Mo 패턴을 이용한 3-D 구조의 Cu₂ZnSn (S<SUB>x</SUB>Se<SUB>1-x</SUB>)₄ (CZTSSe) 박막형 태양전지 제작
조은진(Eunjin Jo),강명길(Myeng Gil Gang),신형호(Shin hyeong ho),윤재호(Jae Ho Yun),문종하(Jong-ha Moon),김진혁(Jin Hyeok Kim) 한국태양광발전학회 2017 Current Photovoltaic Research Vol.5 No.1
Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated Cu₂ZnSn(SxSe1-x)₄ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.
Selenization 온도가 Cu<SUB>2</SUB>ZnSnSe<SUB>4</SUB> 박막의 특성에 미치는 영향
여수정(Soo Jung Yeo),강명길(Myeng Gil Gang),문종하(Jong-Ha Moon),김진혁(Jin Hyeok Kim) 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.3
The kesterite Cu2ZnSnSe4 (CZTSe) thin film solar cells were synthesized by selenization of sputtered Cu/Sn/Zn metallic precursors on Mo coated soda lime glass substrate in Ar atmosphere. Cu/Sn/Zn metallic precursors were deposited by DC magnetron sputtering process with 30 W power at room temperature. As-deposited metallic precursors were placed in a graphite box with Se pellets and selenized using rapid thermal processing furnace at various temperature (480°C~560°C) without using a toxic H2Se gas. Effects of Selenization temperature on the morphological, crystallinity, electrical properties and cell efficiency were investigated by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD), J-V measurement system and solar simulator. Further details about effects of selenization temperature on CZTSe thin films will be discussed.
Cu층 증착시간에 따른 Cu₂ZnSnS₄ (CZTS) 박막의 특성
김윤진(Yoon Jin Kim),김인영(In Young Kim),강명길(Myeng Gil Gang),문종하(Jong Ha Moon),김진혁(Jin Hyeok Kim) 한국태양광발전학회 2016 Current Photovoltaic Research Vol.4 No.1
Cu₂ZnSnS₄ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with Voc of 570 mV, sc of 18.15 mA/㎠ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.