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SDB 웨이퍼를 이용한 빗살형 가속도 센서 구조물의 제조
황인영,남문호,최상영 경북대학교 전자기술연구소 2001 電子技術硏究誌 Vol.22 No.2
In this study, comb type capacitive accelerometer structure was fabricated on SDB(silicon direct bonding) wafer using RIE(reactive ion etching). The RIE conditions for the silicon anisotropic etching was that reactor pressure of 150 mTorr, SF_6 flow rate of 20 sccm, O₂ flow rate of 6 sccm, and RF power of 150 W. The initial capacitance of accelerometer was measured about 1.91 pF. From the results of this study, comb type capacitive accelerometer structure with an overall size of 4000 × 4000 ㎛^2 has been fabricated.