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ICP(Inductively Coupled Plasma) 처리에 따른 n-type SiGe/Metal contact의 SBH(Schottky Barrier Height) 연구
김이곤,장호원,전창민,송영주,강진영,심규환,제정호,이종람 대한금속재료학회 2005 대한금속·재료학회지 Vol.43 No.2
The effect of surface treatment of n-type SiGe using the inductively coupled plasma (ICP) was studied by current-voltage and x-ray photoemission spectroscopy measurements. The ICP treatment produced surface oxides and point defects at the surface of SiGe. The x-ray photoemission spectroscopy measurements showed that atomic ratio of Ge/Si was increased after the etching treatment. These results provide the evidence that Si vacancies were produced at the etched surface. Si vacancies acting as donor for electrons resulted in shift of Fermi level to near the conduction band. As a result, Fermi level could be pinned at such Si vacancies, leading to the remarkable reduction of Schottky barrier height and the reduced dependence of Schottky barrier height on metal work function. (Received September 7, 2004)