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BaTiO₃ 및 TiO₂ 분말이 혼합된 연마제 슬러리(MAS)를 사용한 BTO 박막의 CMP 특성
李愚宣(Woo-Sun Lee),徐龍辰(Yong-Jin Seo) 대한전기학회 2006 전기학회논문지C Vol.55 No.6
In this study, the sputtered BTO film was polished by CMP process with the self-developed BaTiO₃- and TiO₂-mixed abrasives slurries (MAS), respectively. The removal rate of BTO (BaTiO₃) thin film using the BaTiO₃-mixed abrasive slurry (BTO-MAS) was higher than that using the TiO₂-mixed abrasives slurry (TiO₂-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 ㎚/min with an addition of BaTiO₃ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%) below 5% was obtained in each abrsive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).