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李鐘昌,崔旺燁 弘益大學校 科學技術硏究所 2001 科學技術硏究論文集 Vol.12 No.-
In this paper we investigate the phase efficiency in the electrooptic phase modulator using PPpinNN GaAs / AlGaAs W waveguide. The phase change is affected by the refractive index change taking place inside the depletion region. The behavior of the modulator can be understood in terms of two electric field-related and two carrier-related effects linear electrooptic, quadratic electrooptic, plasma, and bandgap shift. As a result, the phase modulation efficiency was measured about 34.6[˚V·mm] for the TE polarized light. The quadratic electrooptic coefficient R = 5.82 x 10^(-15) [㎠/V²] is obtained and the phase efficiency caused by the quadratic electrooptic effect is about 10 times larger than that from the conventional linear electrooptic effect.