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최규황,김인호,변보경,박영신,김건호,이정주,강태원 한국물리학회 2002 새물리 Vol.44 No.2
The structural properties and the photoinduced discharge characteristics (PIDC) of AgGaSe$_2$ thin films which were fabricated by using the thermal evaporation method were investigated. The X-ray diffraction spectra showed that the AgGaSe$_2$ thin films had a strong (112) preferred orientation and a chalcopyrite structure. In this PIDC experiment, the mobility, the carrier concentration, and the current density were calculated. The transit time of the carriers and the electron mobility in the films, as obtained by PIDC measurements, were about 17 $\mu$s and 1.69 cm$^2$/V$\cdot$s, respectively. 진공증착법으로 AgGaSe$_2$ 박막을 제작하여 그 구조와 광유기 방전 특성을 조사하였다. X-선 회절 분석에 의하여 구해진 AgGaSe$_2$ 박막은 격자상수 a = 5.979 \AA와 c = 10.808 \AA를 가지는 chalcopyrite구조를 하고 있었으며, 그 성장 방향은 (112)방향으로 선택성장 됨을 알 수 있었다. 또한 열린회로로 구성되어 있는 시료의 표면에 광 펄스를 주입하여 표면에서 형성된 전하들의 거동을 광유기 방전 특성법을 이용하여 고찰하였다. 초기전위 V$_0$로 형성된 시료의 양단을 주행하는 운반자 농도, 전류밀도 및 전기장 효과를 관찰하여 운반자의 주행시간과 이동도를 구하였다. 계산된 주행시간과 이동도의 값은 각각 약 17 $\mu$s와 1.69 cm$^2$/V$\cdot$s로 주어졌다.
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단일 증발원에 의해 제작된 ??(x=0.625, 0.714) 박막의 전도기구에 관한 연구
丁世敏,崔圭晃 東亞大學校附設基礎科學硏究所 1986 基礎科學硏究論文集 Vol.3 No.1
CdSe 박막의 전기전도는 space-charge-limited-current (SCLC) 이론으로 잘 설명된다고 알려져 있다. 본 실험에서는 일반적으로 사용되는 두개의 증발원에 의한 동시증발이나 CVD 또는 sputtering 대신에, 증발물질 자체를 증발시키기 전에 화학반응으로 미리 조성이 변하도록 해서 비화학양론적 조성비의 박막을 제조했고, 이 시료들의 전도기구를 직류 전류-전압관계를 조사해서 알아 보았다. 실험결과 본 시료들에서 전도기구는 처음에 예상되었던 단일 전하주입시의 SCLC 거동이 아니라 쌍 전하주입에 해당됨을 알 수 있었고, 전체적인 거동은 transittime diodes와 유사한 것으로 판단되었다. 조성비와의 관계는 대체로 조성이 변할수록 그 천이점들을 더 높은 전압 쪽으로 이동시킴을 알 수 있었다. It has already known that the electrical conduction of CdSe thin film is well understood by the space-charge-limited-current theory. But there are not so many papers for the reationship between the electrical behavior and its nonstoichiometry. So, we first obtain the nonstoichiometric ??(x=0.625 and 0.714) powder from the chemical reation and prepare its thin films by the single source evaporation method, instead of the conventional two sources coevaporation. X values for nonstoichiometricites are estimated from cabiration curves of polarographic analysis. Since our primary concerns are related to the electrical behavior and conduction mechanism, we investigate I-V and C-V data in support of transient and small AC signal responses. Finally, we conclude that the electrical behavior and conduction mechanism of our samples are not interpreted with the single carrier injection but with double injection and much similar to those of transit-time diodes.
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崔圭晄 동국대학교 대학원 1973 大學院硏究論集-東國大學校 大學院 Vol.3 No.-
A new simple method has been developed for the determination of viscoelastic properties of high polymer material with ultrasonic wave. In the procedure of the study in the dynamical properties of high polymer(polymethylmetacrylate) material, the characteristics of the high polymer hardend by γ-ray irradiation are also examind. It is possible to investgate the creep compliance {γ(t)=γ_creep(t)} by studing ultrasonic wave absorption rate. The anomalous absorption at the λ-point (phase transition) was studied in detail, and various dynamical properties are will explaind with the help of ultrasonic wave absorption anlysis method.
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崔圭晃,金仁湖,崔洪守 慶尙大學校 1980 論文集 Vol.19 No.1
According to the swarm theory of the nematic liquid crystals, ware investigated the ultrasonic attenuation phenomena under the strong external condition such as the shear, thermal and electric field. The experimental results were shown to be distinguishable from the normal conditions. The periodical curve representing the attenuation in the shear field was appeared as the sine curve. It was considered that these phenomena were due to the long molecules orientation effect.
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Polycrystalline CdTe의 Schottky Barrier Height에 關한 硏究
崔圭晃,崔致圭,南尙熙 慶尙大學校 1982 論文集 Vol.21 No.1
The effective barrier height ?? in a metal-semiconductor tunnel junction was obtained by the Bethe's thermionic emission theory. Schottky barrier diodes were fabricated by vacuum deposition of Al on polycrystalline CdTe and its current-voltage characteristics were investigated in details at a room temperature. The barrier heights deduced from saturation current ?? with I-V characteristics was 0.86eV and idealist factor n=1.54.
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CdTe薄膜의 M-I-M 構造에서 Carrier Transport에 關하여
崔圭晃,崔致圭 慶尙大學校 1982 論文集 Vol.21 No.1
According to the energy band model for the Al-CdTe-Ag sandwich structure, we have investigate to the mechanism of the current limited transport(CLT). As the bias voltage applied to the ?? and ?? electrode, the potential barrier difference for this structure was found 0.2eV. From what this results, we conclude that the mechanism of the current limited transport due to the potential barrier of the contact limited current. Not only this phenomena but also the annealing effect of thin film was shown that the distingushable for virgin film.
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Choi, Kyu-whang 동국대학교 대학원 1974 大學院硏究論集-東國大學校 大學院 Vol.4 No.-
半導體 Si의 不純物原子들의 應力 誘導擴散 超音波 減衰에 기여한다. Akheiser의 超音波減衰理論에 따라 周波數 범위 5㎒~30㎒에서 溫度의 函數로써 超音波吸收 係數를 評價하였다. 半導體 Si의 (111)面에 垂直으로 傳播된 超音波로써 酸素不純物 原子와 放射線 硬化된 Si의 內部 磨擦에 關한 硏究에 重點을 두었다. The stress-induced diffusion of impurity atoms in semiconductor Si contributes to the ultrasonic attenuation. According to the attenuation theory of Akheiser, the result evaluate the absorption coefficient of ultrasonic as a function of temperature, in the frequency range of 5MHz∼30MHz. By studing ultrasonic waves propagated perpendicular to the (111) face on the semiconductor Si, the purpose of the presented study has been focused on the internal friction of Si with oxygen impurity and radiation hardened.
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각 지방의 난방과 냉방도일에 관한 조사연구(1968 ~ '77)
김건호,최규황,김인호 경상대학교 경남문화연구소 1979 慶南文化硏究 Vol.2 No.1
The evaluation of the heating, cooling degree-day and it's number of days in the heating and cooling season were carried out based on the fundamental materials of the daily air-temperature from Jan. 1968 to Dec. 1977 which had been observed in the 24 meteorological observations in Korea. The obtained results were summarized as follows: (1) In the cases of base temperature 18,16,14,12,10, and 5℃, the annual mean heating degree-day(℃-day) were evaluated as HD′_(18-18)≒2570, HD′_(16-16)≒2120, HD′_(14-14)≒1710, HD′_(12-12)≒1360, HD′_(10-10)≒1040 and HD′_(5-5)≒420 (see, Table-1). (2) In the cases of base temperature 24℃, the annual mean cooling degree day were evaluated about CD′_(24-24)≒74℃ day (see, Table-1). (3) In the cases of HD′_(18-18), HD′_(16-16), HD′_(14-14), HD′_(12-12), HD′_(10-10), HD′_(5-5) and CD′_(24-24), the annual mean heating and cooling day in the season were distributed about 238, 210, 182, 166, 146, 107 and 45 days. (4) Monthly mean heating and cooling degree-day (℃-day) were shown as Table-2. (5) The isolines of the distributed mean heating and cooling degree-day according to the base temperature were plotted as shown Fig. (1)∼(7).
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