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디스플레이 및 일시 기능 소자에 적용된 산화물 기반 박막 트랜지스터
남궁석,송민규,권장연 한국세라믹학회 2018 세라미스트 Vol.21 No.1
Oxide semiconductor has been spotlighted as a channel material of TFTs in AMLCD as an alternative to Si, due to high mobility ( > 5cm 2 /Vs). It is also one of the strong candidates for TFTs in AMOLED because of high bias stability at amorphous phase. Beyond the advantages mentioned above, oxide semiconductor has many strengths such as transparency, low fabrication temperature and relatively low fabrication cost. For those reasons, the application of oxide semiconductor is not limited to display but can be extended to new types of electronics, for example, transient electronics for human implantable devices. From this context, oxide materials that have been used as semiconductor and insulator at transient electronics are investigated respectively, and conductor and substrate candidates are also explained, since transient electronics require systematic consideration beyond individual oxide films.
탄소섬유 복합재료 보오링바의 Chatter 특성에 관한 언구
김형철,김기수,함승덕,남궁석 忠南大學校 産業技術硏究所 1994 산업기술연구논문집 Vol.9 No.1
The critical depth of cut and the characteristics of chatter of a carbon/epoxy composite boring bar were examined through a cutting test. The S32U-PCLNR12S steel boring bar in the cutting test has the ability of processing bores about 125mm of the bore length at 100m/min of cutting speed, and the carbon/epoxy composite bores about 110mm. The critical depth of cut of chatter generation of a boring bar is basically influenced by its static stiffness, the height and width of a chatter mark after chatter generation, and by the natural frequency and damping. Therefore, in order to develope a more highly efficient boring bar, the Young's modulus intensifying the static stiffness should be higher. Under the above condition, the materials with a high specific Young's modulus and damping should be used to increase the stability of chatter after its generation.