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Wi, Jae-Hyung,Han, Won Seok,Lee, Woo-Jung,Cho, Dae-Hyung,Yu, Hye-Jung,Kim, Chae-Woong,Jeong, Chaehwan,Yun, Jae Ho,Kim, Chang-Il,Chung, Yong-Duck IEEE 2018 IEEE journal of photovoltaics Vol.8 No.3
<P>Thin-film multijunction solar cells are considered to be the most promising structure for next-generation photovoltaic devices. We fabricated CuGaSe<SUB>2</SUB> (CGS)/Cu(In,Ga)Se<SUB>2</SUB> (CIGS) monolithic tandem solar cells. The intermediate AZO film was used as a recombination layer between the top cell and the bottom cell, and its thickness was varied from 50 to 200 nm. The best tandem cell parameters with a 50 nm thick Al-doped ZnO (AZO) layer showed a <I>V</I><SUB>OC</SUB> = 1.03 V, <I>J</I><SUB>SC</SUB> = 10.24 mA/cm<SUP>2</SUP>, <I>FF</I> = 41.5%, and <I>efficiency</I> = 4.32%. We showed the <I>V</I><SUB>OC</SUB> of monolithic tandem cell to be over 1 V under illumination. We also observed the current continuity between the CGS cell and the CIGS cell which were connected in series as subcells. As the AZO thickness increased, the spectral response of the top cell decreased and the bottom cell was not completely saturated. The 50 nm thick AZO layer leads the CIGS bottom cell to be current-limiting, whereas the 200 nm thick AZO layer shifts the limitation to the CGS top cell. The results also showed that the In element diffusion into the CGS top absorber enhanced the electrical and optical properties of the top cell, whereas the Zn element diffusion into CIGS bottom absorber tended to degrade the bottom cell simultaneously.</P>
위성민 ( Sung Min Wi ),이진석 ( Jin Seok Lee ),장보윤 ( Bo Yun Jang ),김준수 ( Joon Soo Kim ),안영수 ( Young Soo Ahn ),윤우영 ( Woo Young Yoon ) 한국주조공학회 2013 한국주조공학회지 Vol.33 No.4
A ribbon-type polycrystalline silicon wafer was directly fabricated from liquid silicon via a novel technique for both a fast growth rate and lagre grain size by exploiting gas pressure. Effects of processing parameters such as moving speed of a dummy bar and the length of the solidification zone on continuous casting of the silicon wafer were investigated. Silicon melt extruded from the growth region in the case of a solidification zone with a length of lcm due to incomplete solidification. In case of a solidification zone wieh a length fo 2 cm, on the other hand, continuous casting of the wafer was impossible due to the volume expansion of sil-icon derived from the liquid-solid transformation in solidificatioon zone. Consequently, the optimal length of the solidification zone was 1.5 cm for maintaining the position of the dummy bar was 6 cm/min, but liquid silicon extruded from the growth region without solidification when the moving speed of the dummy barr was≥9 cm/min. This was due to a shift of the position of the solid-liquid interface from the solidification zone to the moving area. The present study repots experimental findings on a new direct growth sys-tem for obtaining silicon wafers with both high quality and producticity, as a candidate for an altemate route for the fabrication of ribbon-type silicon wafers.
Lee, Jun-Kyu,Wi, Sung-Min,Lee, Jin-Seok,Jang, Bo-Yun,Kim, Joon-Soo,Ahn, Young-Soo,Cho, Churl-Hee Hindawi Limited 2015 Journal of nanomaterials Vol.2015 No.-
<P>A silicon substrate with the dimensions of 100 × 140 × 0.3 mm was grown directly from liquid silicon with gas pressure. The silicon melt in the sealed melting part was injected into the growth part at applied pressure of 780–850 Torr. The solidified silicon substrate was then transferred by the pull of the cooled dummy bar. A desirable structure with a liquid-solid interface perpendicular to the pulling direction was formed when the mold temperature in the solidification zone of the growth part was much higher than that of the dummy bar, as this technique should be able to overcome thermal loss through the molds and the limited heat flux derived from the very narrow contact area between the silicon melt and the dummy bar. In addition, because the metallic impurities and expansion of volume during solidification are preferably moved to a liquid phase, a high-quality silicon substrate, without defects such as cracks and impurities in the substrate, could be manufactured in the interface structure. The present study reports the experimental findings on a new and direct growth system for obtaining silicon substrates characterized by high quality and productivity, as a candidate for alternate routes for the fabrication of silicon substrates.</P>
Permanent Pacemaker for Syncope after Heart Transplantation with Bicaval Technique
Lee, Kyong Joo,Jung, Yun Sook,Lee, Chan Joo,Wi, Jin,Shin, Sanghoon,Kim, Taehoon,Lee, Sang Hak,Kang, Seok-Min,Lee, Moon-Hyoung,Park, Han Ki Yonsei University College of Medicine 2009 Yonsei medical journal Vol.50 No.4
<P>Sinus node dysfunction occurs occasionally after heart transplantation and may be caused by surgical trauma, ischemia to the sinus node, rejection, drug therapy, and increasing donor age. However, the timing and indication of permanent pacemaker insertion due to sinus node dysfunction following heart transplantation is contentious. Here, we report a case of a permanent pacemaker insertion for syncope due to sinus arrest after heart transplantation, even with a bicaval technique, which has been known to associate with few incidences of sinus node dysfunction.</P>
꼬막 , Tegillarca granosa ( Linnaeus ) 의 용존산소 변화에 따른 생리적 반응
위종환(Chong Hwan Wi),신윤경(Yun Kyung Shin),문태석(Tae Seok Moon) 한국수산과학회 2002 한국수산과학회지 Vol.35 No.5
전남 보성군 장도해역의 펄질에 서식하는 꼬막의 환경내성에 대한 연구의 일환으로 수중내 용존산소의 감소에 따라 생존율, 호흡률, 여수율 등의 생리적 반응 및 혈액성상의 변화를 조사하였다. 꼬막의 용존산소농도의 감소에 따른 LC_50은 수온 10℃에서 16일동안 큰개체 1,31 ㎎ DO/L, 작은 개체는 0.95㎎ DO/L이었으며, 수온 25℃의 경우에는 각각 1.13와 1.24㎎ DO/L이었다 호흡률과 여수율은 용존산소의 감소에 따라 대체로 감소하는 경향을 보였다. 혈액 성분은 Hemoglobin, glucose, total protein, total cholesterol, GOT 및 GPT 등을 분석하였다. 헤모글로빈은 모든 개체에서 수중내 용존산소의 감소에 따라 증가하였으나, 스트레스의 지표로 이용되고 있는 glucose는 수온 25℃, 용존산소 1.6∼l.2㎎ DO/L에서 일시적 증가를 보였으며, 1.2㎎ DO/L 이하에서 감소하는 경향을 보였다. 그외 total protein, total cholesterol, GOT 및 GPT등은 용존산소의 감소에 따라 감소하거나 불규칙한 경향을 나타내었다. To investigate the effects of the dissolved oxygen concentration (DO) of Tegillarca granosa (Linnaeus), We measured LC_50 survival, oxygen consumption rate, filtration rates and blood composition under 10 ± 0.5℃ and 25 ± 0.5℃ as a function of DO. The 16 days-LC_50 of DO for T. granosa was 1.31 ㎎ DO/L in large individual and 0.95 ㎎ DO/L in small individual. At 25℃, the LC_50 of DO in large and small individual was 1.13 and 1.24 ㎎ DO/L, respectively. With decreasing DO, oxygen consumption rate, and filtration rates of T. granosa decreased. Blood composition of T. granosa was analysed hemoglobin, glucose, total protein, total cholesterol, GOT and GPT. Hg was increased with decreasing DO, but glucose was decreased below 1.2 ㎎ DO/L Total protein, total cholesterol, GOT and GPT were investigated irregular and decreasing aspect.