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- 저자 : ( Jer-wei Wu ) (검색결과 2 건)
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( Jer-wei Wu ),( Jia-horng Kao ),( Tai-chung Tseng ) 대한간학회 2021 Clinical and Molecular Hepatology(대한간학회지) Vol.27 No.4
Patients with chronic hepatitis B virus (HBV) infection are at risk of developing hepatocellular carcinoma (HCC), and serum markers reflecting viral replication are potential predictors for HCC development. Besides the levels of serum HBV DNA and hepatitis B surface antigen (HBsAg), hepatitis B core-related antigen (HBcrAg) quantification is an emerging serological marker for viral replication. Unlike HBV DNA and HBsAg, HBcrAg is a covalently closed circular DNA-derived protein marker, consisting of hepatitis B e antigen (HBeAg), p22cr, and hepatitis B core antigen. In treatment-naive HBV patients, higher HBcrAg levels are shown to be associated with an increased risk of HCC in several studies. More importantly, HBcrAg may complement HBV DNA level to predict HCC development. For example, an Asian treatmentnaive cohort study’s data showed that HBcrAg level of 4 log U/mL was effective to stratify HCC risk in HBeAg-negative patients with intermediate viral loads, who may not need antiviral therapy because of the low to moderate risk of HCC. In patients receiving prolonged nucleos(t)ide analogue with profound viral suppression, most data indicated that HBV DNA and HBsAg levels no longer serve as HCC predictors. However, several studies suggested on-treatment HBcrAg levels may remain as an HCC predictor. In summary, HBcrAg level can be a useful biomarker for treatment-naive patients, but its value in on-treatment patients needs validation. The next challenge is how to combine HBcrAg with the other viral markers to construct a better HCC prediction model, optimizing the management of HBV patients. (Clin Mol Hepatol 2021;27:524-534)
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Tien-Tung Luong,Binh Tinh Tran,Yen-Teng Ho,Ting-Wei Wei,Yue-Han Wu,Tzu-Chun Yen,Lin-Lung Wei,Jer-Shen Maa,Edward Yi Chang 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.3
The effects of surface pre-treatments and the role of an AlN buffer layer for 2H-SiC growth on c-plane sapphire substrates by thermal CVD are investigated. While the crystallinity of SiC directly grown on sapphire substrate always degrades with a hydrogen pre-treatment but improves by optimizing carbonization, the crystallinity of SiC grown on sapphire substrate using an AlN buffer grown by MOCVD improves with sufficient time of exposure to the H pre-treatment but always deteriorates with carbonization. Detailed microstructural analysis by phi-scan x-ray diffraction reveals that SiC film grown on sapphire substrate consists of crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. A highly oriented hexagonal 2H-SiC film is obtained on low-cost c-plane sapphire substrate by using an AlN buffer. 2H-SiC is unambiguously determined not only by phi-scan x-ray diffraction but also by high-resolution transmission electron microscopy. The growth relationship between 2HSiC and 2H-AlN are coherent due to the favorable bonding of C and Al between SiC and AlN.
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