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Choi, D.,Moon, J. H.,Kim, H.,Sung, B. J.,Kim, M. W.,Tae, G. Y.,Satija, S. K.,Akgun, B.,Yu, C.-J.,Lee, H. W.,Lee, D. R.,Henderson, J. M.,Kwong, J. W.,Lam, K. L.,Lee, K. Y. C.,Shin, K. The Royal Society of Chemistry 2012 Soft matter Vol.8 No.32
<P>X-Ray and neutron reflectivity measurements on systems composed of a 1,2-dipalmitoyl-<I>sn</I>-glycero-3-phosphocholine (DPPC) bilayer and transcription-activating-factor derived peptides (TDPs) have allowed us to determine the mechanism of membrane translocation. By monitoring the structural changes of the bilayers caused by the binding of TDPs while systemically varying temperature and TDP concentration, our results revealed the detailed molecular structures of the stepwise interactions that occurred during the translocation of TDP across the lipid bilayers. While little indication of membrane perturbation was observed at low TDP concentrations, we found that the TDP movement across the membrane induced defect formations in the membrane at higher TDP concentrations.</P> <P>Graphic Abstract</P><P>X-Ray and neutron reflectivity have allowed us to reveal the detailed molecular structures of cell penetrating peptides across the supported lipid bilayers. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2sm25913c'> </P>
RTMOCVD법에 의해 제조된 Ta₂O(5) 박막의 특성
소명기,Kwong, D.L 江原大學校 産業技術硏究所 1999 産業技術硏究 Vol.19 No.-
Ultra thin Ta₂O5 gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source TaC12H30O5N and O₂ gaseous mixtures. As a result, Ta₂O5 thin films showed significantly low leakage current compared to SiO₂ of identical thickness, which was due to the stabilization of the interfacial layer by NO (SiOxNy) passivation layer. The conduction of leakage current in Ta₂O5 thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.
N2O-Based Gate And Tunneling Dielectrics for VLSI Applications
Lee, J.,Yoon,G. W.,Lo,G. Q.,Ahn, J.,Kwong,D. L. 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
In this paper, we present an overview of N₂O-based ultra thin MOS gate and tunneling dielectrics for ULSI applications. We will discuss the motivation for using these dielectrics, the N₂O oxidation process and kinetics, the chemical/electrical properties of N₂O-based oxides and their correlations with processing conditions, and the performance and reliability of MOS devices with N₂O-based gate dielectrics. The potential of N₂O-based oxides for NVM applications will also be discussed and demonstrated. Finally, the issues of process control and manufacturability will be discussed.
Fang, W.J.,Lam, K.O.,Ng, S.C.Y.,Choi, C.W.,Kwong, D.L.W.,Zheng, S.S.,Lee, V.H.F. Asian Pacific Journal of Cancer Prevention 2013 Asian Pacific journal of cancer prevention Vol.14 No.7
Background: To compare response evaluation criteria in solid tumours (RECIST) and volumetric evaluation (VE) for colorectal cancer with liver-limited metastasis. Patients and Methods: VE of liver metastases was performed by manual contouring before and after chemotherapy on 45 pairs of computed tomography (CT) images in 36 patients who suffered from metastatic colorectal cancer (mCRC) with liver metastasis only. Cohen kappa was used to compare the agreement between VE and RECIST. Pearson correlation was performed for their comparison after cubic root transformation of the aggregate tumor volumes. Logistic regression was done to identify clinical and radiographic factors to account for the difference which may be predictive in overall response (OR). Results: There were 16 partial response (PR), 23 stable disease (SD) and 6 progressive disease (PD) cases with VE, and 14 PR, 23 SD and 8 PD with RECIST. VE demonstrated good agreement with RECIST (${\chi}$=0.779). Discordant objective responses were noted in 6 pairs of comparisons (13.3%). Pearson correlation also showed excellent correlation between VE and RECIST ($r^2$=0.966, p<0.001). Subgroup analysis showed that VE was in slightly better agreement with RECIST for enlarging lesions than for shrinking lesions ($r^2$=0.935 and $r^2$=0.780 respectively). No factor was found predictive of the difference in OR between VE and RECIST. Conclusions: VE exhibited good agreement with RECIST. It might be more useful than RECIST in evaluation shrinking lesions in cases of numerous and conglomerate liver metastases.
HIGH QUALITY SELECTIVE EPITAXY GROWTH OF SILICON FOR DEVICE ISOLATION
Chun, H. G.,Yang, H. S.,Lee, S. K.,Lee, K. M.,Yoo, K. D.,Kim, Y. M.,Kwong, D. L.,Lee, S. K. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
High quality selective epitaxy of silicon were grown on (100) silicon substrate using Rapid Thermal Chemical Vapor Deposition. Defect free epitaxial islands were successfully grown into oxide windows with $lt;110$gt; sidewall orientation. Two typical problems associated with conventional eptaxial techniques ; oxide sidewall undercutting and high epitaxial defect density near the oxide sidewalk were completely eliminated Another problem which has been an obstacle to device application, crystallographic faceting, was removed by polishing technique to grow gate oxide.