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      • Dexamethasone regulates the development and connexin43 expression of rat preantral follicles

        ( Shiao-hsuan Yang ),( Chueh-ko Yang ),( Cheng-hsuan Wu ),( Horng-der Tsai ) 대한산부인과학회 2016 대한산부인과학회 학술대회 Vol.102 No.-

        Objectives: Corticorsterone has been shown to inhibit luteinizing hormone production and the receptors had been found in the follicles. Ovarian follicles represent the basic functional unit of the ovary. In the study we had evaluated the effect of synthetic glucocorticoids dexamethasone (DEX) on the growth (the increase in size), differentiation and connexin 43 of intact preantral follicles in a serum-free culture system. Materials and methods: Preantral follicles with two layer granulosa cells and intact membrane were dissected mechanically from the ovaries of 24-day-old rats and cultured for 72 hours with or without recombinant human follicle- stimulating hormone (FSH) in the presence or absence of increasing concentrations of glucocorticoids. To assess growth rates, follicles were cultured for 72 hours and analyzed for follicle diameter and follicle cell numbers changes. After 72 hours, the follicles were collected and their connexin 43 and inhibin-α contents were determined. Results: Follicles cultured in the absence of FSH grew slowly (around 10% in diameter). Treatment of the follicles with FSH induced an increase in both of follicle size, follicular cell number, and follicle cell differentiation based on increased inhibin-α synthesis. When follicles were cultured with a constant dose of FSH (100 mIU/ml) and increasing doses of dexamethasone (DEX) (0.001-1 μg/ml), the growth rate was reduced by 18-83%. The inhibitory effect by DEX was concentration dependent. The addition of DEX (0.1 μg/ml) decreased FSH-induced follicle cell number. This decrease was associated with decreased expression of proliferating cell nuclear antigen (PCNA), and inhibin-α, a differential marker of preantral follicle. The DEX-induced decrease in the inhibin-α content was also associated with decreased expression of the connexin 43. Conclusion: These results demonstrated that DEX is able to attenuate the FSH-stimulated preantral follicle development.

      • Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes

        Lee, Youngsu,Um, Doo-Seung,Lim, Seongdong,Lee, Hochan,Kim, Minsoo P.,Yang, Tzu-Yi,Chueh, Yu-Lun,Kim, Hyung-jun,Ko, Hyunhyub American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.26

        <P>Semiconductor heterostructures have enabled numerous applications in diodes, photodetectors, junction field-effect transistors, and memory devices. Two-dimensional (2D) materials and III-V compound semiconductors are two representative materials providing excellent heterojunction platforms for the fabrication of heterostructure devices. The marriage between these semiconductors with completely different crystal structures may enable a new heterojunction with unprecedented physical properties. In this study, we demonstrate a multifunctional heterostructure device based on 2D black phosphorus and n-InGaAs nanomembrane semiconductors that exhibit gate-tunable, photoresponsive, and programmable diode characteristics. The device exhibits clear rectification with a large gate-tunable forward current, which displays rectification and switching with a maximum rectification ratio of 4600 and an on/off ratio exceeding 10<SUP>5</SUP>, respectively. The device also offers nonvolatile memory properties, including large hysteresis and stable retention of storage charges. By combining the memory and gate-tunable rectifying properties, the rectification ratio of the device can be controlled and memorized from 0.06 to 400. Moreover, the device can generate three different electrical signals by combining a photoresponsivity of 0.704 A/W with the gate-tunable property, offering potential applications, for example, multiple logic operator. This work presents a heterostructure design based on 2D and III-V compound semiconductors, showing unique physical properties for the development of multifunctional heterostructure devices.</P> [FIG OMISSION]</BR>

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