중등학교 접촉스포츠선수에 있어서 운동 스트레스 변인 및 과훈련 인식도와 운동 탈진간의 인과분석

백원칠,김수겸 한국스포츠리서치 2003 한국 스포츠 리서치 Vol.14 No.2

The purpose of this study is to investigate the causal relationships between the stress variables of contact sports player, overtraining, and strain, and athletic burnout in middle school using Smith's(1986) Burnout model. The subjects are 282 middle school players in G city, G and C province. The following scales are used in this study. (1) House and Well(1978)'s Social support scale (2) athletic stress scale which is developed by this research (3) Jenken's(1979) A/B type pattern Behavior Inventory (4) the cognition of overtraining scale which is developed by this research (5) Derogatis' Strain Scale and (6) Maslach's Burnout Inventory. The results obtained from this study are as follows : The first, according to correlation analysis, 1) there are significant reverse relationship between social support and cognition of overtraining, and burnout, 2) there are significant relationship between athletic stress and strain, athletic burnout and between cognition of overtraining and strain, between strain and athletic burnout. The second, in the path analysis, (using LISREL technique), there are significant relationships between the exogenous variables and the endogenuos variables in 'stress→ cognition of overtraining', 'stress → strain' 'stress → burnout', 'A/B type → cognition of overtraining', 'A/B type → strain', 'A/B type → burnout'. There are also significant relationships between the endogenous and the endogenous variables in 'cognition of overtraining → strain', 'cognition of overtraining → burnout', 'strain → athletic burnout'.

실온에서 Al-SiO_2-Si(100)_p형 계의 경계면 반응

박동수,손기수,이원식,박봉두 慶北大學校 物理化學硏究所 1985 硏究論文集 Vol.6 No.-

실온에서 알루미늄 산화층(SiO_2)-반도체〔Si(100)_p형〕 소자의 경계면 반응을 Ar^+이온 sputter총을 부착한 AES로 수행했다. SiO_2-Si 경계면은 Si-Si 결합, Si-O 결합의 두 가지 상태를 갖고 있으며, 경계면 넓이는 약 30Å였다. Al-SiO_2-Si 반도체 소자의 경계면 반응은 SiO_2 속의 자유 실리콘이 알루미늄 표면으로 확산되고, 알루미늄과 SiO_2 경계면에 대량의 자유 실리콘이 존재한다. Al-interfacial layer(SiO_2)-semiconductor Si(100)_p-type structures were investigated by the Auger Electron Spectroscopy. The results of depth profiling Ar^+ -ion sputtering are presented for the SiO_2-Si(100)_p-type cell. In the interface, Silicon exists in only two distinct bonding states: Si-Si or Si-O bonding. The exact width of the interface is known as indefinite, but here we estimate it approximately 30Å. The results of depth profiling Ar^+ -ion sputtering are also presented for the Al-SiO_2-Si(100)_p-type cell. Metal(Si) atoms from deposited interfacial oxide layer were observed on the Al surface. The interfacial reaction takes place between Al and the interfacial layer at the room temperature. The diffusion of metal(Si) atoms from the interfacial layer towards the Al surface is suspected to play a role in degradation effect in the MIS solar cells.

Ion Deposition 方法으로 成長시킨 轉移金屬表面의 Auger電子分光 分析

朴東秀,李元植,崔永奎 慶北大學校 1984 論文集 Vol.37 No.-

An efficient versatile ion spurrering apparatus was designed and constructed. The source produces ion beams of noble gas such as Ar^+ ion in the ion energy range from a few electron volts to several kiloelectron volts with high current density. The ion beam size was controlled as 1 mm and up to a few mm in diameter. The source has been successfully applied to both the sputtering deposition of thin fils of Al, Ag, and Mo on the SiO_2 substrates and the cleaning of metal surfaces. The deposition rates were 15A~50A/min. Auger electron spectra for Al, Ag, and Mo thin film deposited by present apparatus were obtained. They showed excellent characteristic properties of deposition modes such as the augular dependence and and the localization.

Nb-1%Zr, Nb-5%Zr 합금에서 Zirconium과 탄소의 상호작용 및 표면분정

박동수,이원식,채건식 慶北大學校 物理化學硏究所 1984 硏究論文集 Vol.5 No.-

Nb-1% Zr, Nb-5% Zr 합금에서 지르코니움과 탄소의 상호작용 및 표면분정현상을 아르곤 이온종을 부착한 Auger 전자분광기로 연구했다. 고순도(99.996%)니오비움 다결정은 대부분의 탄소와 산소로 크게 부식되어 있었으며, 니오비움 다결정 내부에 함유된 탄소의 화학적 결합상태도 탄화물, 석묵 두가지 상태로 나타났다. 고순도 니오비움 다결정에 소량의 지르코니움(1%, 5%)을 첨가해서 만든 Nb-Zr 합금표면은 화학적으로 안정한 지르코니움 탄화물로 덮혀있고, 그 두께가 약 10Å정도임을 Auger분광자료로 밝혀냈고, 여기에 나타난 지르코니움, 탄소는 Nb-Zr 합금에서 표면 분정된 사실도 밝혀냈다. Nb-Zr 합금을 점진적으로 온도를 올려가면서, 지르코니움이 표면 분정된 양을 측정한 결과 지르코니움은 1300℃ 근방에서 산소는 1100℃ 근방에서 가장 많이 표면분정됨을 알았다. 이상의 실험결과로 탄소 산소로 크게 부식되어 있는 니오비움 다결정에 소량의 지르코니움(1%, 5%)를 첨가하므로서 탄소 산소의 부식을 크게 줄일 수 있음을 알았다. Auger electron spectrosopcy has been used in conjunction with argon ion sputtering in a study of the surface segregation and interaction of carbon with zirconium in Nb-Zr alloys. The result of depth profiling with argon ion sputtering showed that the carbon coverage on the Nb-Zr alloy surfaces was significantly more than that on the Nb polycrystalline surface. The dominant part of these carbon and oxygen was due to segregation from the Nb-Zr alloys. The segregation of zirconium to the Nb-Zr alloy surfaces occured at temperature as low as 900℃ with the maximum occurring around 1100℃. While the maximum depths of zirconium and oxygen segregated from the Nb-Zr alloy at temperature 1100℃ were respectively 5Å and 15Å.

느린 多價 Ar 이온 생산을 위한 새로운 장치 고안

박동수,이의완,이원식 慶北大學校 1985 論文集 Vol.39 No.-

New apparatus of producing highly charged slow Ar ions by bombarding Ar^4+ ions with a 42MeV and 10nA on the 10^-4 Torr. Ar target is designed. We have a complete discussion of the design considerations and the detailed testing of the apparatus. Single collision conditions are attained at a sufficiently low pressure where P_i becomes constant. Secondary Ar ion current of producing by collision between Ar^4+ ions with a 20MeV and 10nA and 10^-4 Torr Ar target is about 1.77×10 exp (-11) amperes.

半導體 PbS 薄膜의 活性化硏究

朴東秀,孫基洙,李元植 慶北大學校 物理化學硏究所 1984 硏究論文集 Vol.5 No.-

Auger electron spectroscopy has been used in conjunction with argon ion sputtering in a study of the chemical structure of the surface, bulk and interface region between chemical deposited PbS and the glass substrate, thermally oxidated PbS and the glass substrate and thermally oxidated PbS and the SiO_2. All these PbS films were activated by means of oxidation in various conditions. In the result of the present study, we showed that our experiments are coincidence with theoretical mechanism "minority-carrier model" of photoconductivity of PbS film. The principal features in the Auger electron of a complex spectra from a SiO_2, carbide and graphite surface are presented. They occured when some of the electrons involved in this Auger process are valence electrons. It was found that these complex spectra serve as a fingerprint for the identification of the form of the carbon, oxygen at surfaces. We found the chemical structure of the surface, bulk and interface of a 1-2μ PbS chemical deposited on SiO_2 and simultaneous activation effect of SiO_2-PbS interface.

半導體 PbS 薄膜의 活性化硏究

朴東秀,孫基洙,李元植 慶北大學校 1982 論文集 Vol.34 No.-

Auger electron spectroscopy has been used in conjunction with argon ion sputtering in a study of the chemical structure of the surface, bulk and interface region between chemical deposited PbS and the glass substrate, thermally oxidated PbS and the glass substrate and thermally oxidated PbS and the SiO_2. All these PbS films were activated by means of oxidation in various conditions. In the result of the present study, we showed that our experiments are coincidence with theroretical mechanism "minority-carrier model" of photoconductivity of PbS film. The principal features in the Auger electron of a complex spectra from a SiO_2, carbide and graphite surface are presented. They occurred when some of the electrons involved in this Auger process are valence electrons. It was found that these complex spectra serve as a fingerprint for the identification of the form of the carbon, oxygen at surface. We found the chemical structure of the surface, bulk and interface of a 1-2μ PbS chemical deposited on SiO_2 and simultaneous activation effect of SiO_2-PbS interface.

환율변동성과 무역흐름

모수원,김영숙 조선대학교 지역사회발전연구원 2001 地域發展硏究 Vol.6 No.2

해외유입전염병관리 체계에 대한 의사들의 성향조사

이종수,이원자,고원규,전진호 한국건강관리협회 1998 건협 Report Vol.1 No.-

벼 밭재배에 따른 수량 및 미질

최원영,최민규,김상수,이규성,김태수,이재길 한국국제농업개발학회 2003 韓國國際農業開發學會誌 Vol.15 No.4

벼 밭재배시 논벼 품종들의 적응성을 검토하기 위하여 마늘 간작으로 벼를 건답점파하여 재배한 결과를 요약하면 다음과 같다. 1. 입모율은 밭벼에 비해 논벼 품종이 낮았는데 그 순서는 상남밭벼〉동진찰벼〉신선찰벼〉진부찰벼 순이었다. 2. 출수기는 상남밭벼에 비해 진부찰벼는 3일 빨랐고 신선찰벼는 9일, 동진찰벼는 12일이 늦었다. 3. ㎡당 수수와 등숙비율은 밭벼에 비해 논벼품종들이 높았다. 4. 쌀수량은 상남밭벼에 비해 신선찰벼는 12%가 많았고 동진찰벼는 같았으며, 진부찰벼는 18%가 적었다. 5. 완전립비율은 진부찰벼에서 높았고 그 외는 비슷하였으며, 식미지수는 상남밭벼에 비해 동진찰벼는 높았으나 진주찰벼와 신선찰벼는 낮았다. To identify the rice varieties adaptable for upland cultivation, a series of experiments was carried out at the field(Chonnam series) of the Muan. Cheonnam province during 1999 - 2001. Four varieties, Jinbuchalbyeo(early-maturing variety), Sinseonchalbyeo (medium-maturing variety), Dongjinchalbyeo(medium-late maturing variety), and Sangnambatbyeo as a standard variety for upland were used in this experiment. Seedling establishment of the varieties was the highest in Sangnambatbyeo and followed by Dongjinchalbyeo under upland condition. Heading date in general delayed ranges from 9 to 12 days, while early-maturing variety, Jinbuchalbyeo was faster for 3 days compared with Sangnambatbyeo. Number of panicle per square meter was similar in both lowland and upland rice but percentage of ripened grain was high in lowland rice. Milled rice yield was high as of 12% in Sinseonchalbyeo compared with Sangnambatbyeo. Head rice ratio showed also the highest in Sinseonchalbyeo. The results indicate that Sinseonchalbyeo as glutinous rice variety could adapt well in this upland condition, and have good milling recovery as head rice as well as yield advantage.