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Comparison of TiN and TiAlN as a Di usion Barrier Deposited by Atomic Layer Deposition
Hyeongtag JEON 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.1
We deposited the TiN and the TiAlN lms by using the atomic layer deposition (ALD) method with tetrakis-ethylmethyl-amido-titanium (TDMAT) as the Ti precursor, dimethylaluminumhydride- ethylpiperidine (DMAH-EPP) as the Al precursor, and NH3 as the reactant gas. The composition of the TiN lm exhibited stoichiometric TiN, which was almost 1:1 of Ti:N. However, the Ti to Al ratio in the TiAlN lm was less than unity. The carbon impurity content in the TiN and the TiAlN lms deposited at 200 C was below 5 at.%. The growth rates of the TiN and the TiAlN lms obtained with this ALD system were about 0.8 and 1.25 A per cycle. In case of the TiN lms, etch pits started to appear when the sample was annealed at 500 C while in the TiAlN lm they started to appear at 700 C.
Remote Plasma-Enhanced Atomic Layer Deposition(PEALD) of TiN Using TDMAT with NH₃ plasma
Ju Youn Kim,Hyeongtag Jeon,Do Youl Kim,Hee Ok Park 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
The TiN lm was deposited by using a remote plasma-enhanced atomic-layer deposition (PEALD) method with a tetrakis-dimethyl-amino-titanium (TDMAT) precursor and an ammonia (NH3) plasma. The TiN lm showed a relatively constant compositional variation with a carbon impurity content of less than 3 at.%. The carbon impurity was sharply reduced by increasing the plasma treatment time from 5 to 10 seconds. The TiN lm exhibited an amorphous structure at annealing temperatures up to 500 C and transformed to a crystalline structure when annealed at temperatures above 550 C. The surface morphologies of the TiN lms were shown to be relatively smooth for all samples. The observed growth rate of the TiN lms was about 2 A per cycle. The TiN lms grown by using remote PEALD also showed excellent step coverage for a structural with a very high aspect-ratio and no compositional variation with the position of the contact hole.
Ju Youn Kim,Hyeongtag Jeon,Keun Woo Lee,Yangdo Kim,Young Do Kim,Hee Ok Park 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.1
Remote plasma-enhanced atomic-layer deposition with tertbutyllimidotris(diethylamido)tantalum as the Ta precursor and NH3 gas or NH3 plasma as the reactant was used to deposit TaN lms, the TaN lms deposited at 250 C showed a lower carbon impurity contents when NH3 plasma was used as the reactant. The resistivities of the TaN lms processed with NH3 gas and NH3 plasma were approximately 3,000 and 1,000 cm, respectively. The growth rates of the TaN lm processed with NH3 gas and NH3 plasma were about 1.3 and 1.4 per cycle, respectively. The TaN lms showed a relatively smooth interface and amorphous characteristics exhibited excellent step coverage on 0.25-m-wide by 2.5-m-deep contact hole structure. The barrier characteristics of Cu/TaN/Si samples were observed after annealing at various temperatures, and the TaN lms failed after annealing at 700 ℃.
Lee, Hak-Joo,Jeon, Hyeongtag,Lee, Wook-Seong AmericanChemical Society 2012 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.116 No.16
<P>We have investigated the effect of surface modification on the dispersion of nanodiamond seeds on the SiO2-coated Si substrate, to enable the ultrathin ultrananocrystalline diamond (UNCD) coating on the substrate, by direct current plasma-assisted chemical vapor deposition (DC-PACVD) using hydrogen-rich chemistry. The ultrasonically dispersed seed density on the SiO2-coated Si wafer was so much lower than that on the pristine Si wafer that the void-free ultrathin UNCD coating was impossible. For surface modification, we have exposed the substrate to (1) the hydrogen/hydrocarbon plasma in the DC-PACVD chamber or (2) the hydrocarbon atmosphere in the hot filament chemical vapor deposition (HF-CVD) chamber, prior to the ultrasonic seeding. The exposure to hydrocarbon or to its plasma greatly reduced the seed density, while exposure to hydrogen plasma drastically enhanced it by a factor of 6, which enabled a void-free ultrathin UNCD coating as thin as 30 nm. The UNCD film and the substrate surface before and after the surface treatment were characterized by XPS, NEXAFS, FTIR, Raman spectroscopy, HR-SEM, HR-TEM, EDX, and the zeta potential analyzer. The effects of the pretreatments on the seed density were explained by Si-OH or Si-CH3 termination and by the consequent change on (1) the zeta potentials of the substrate and (2) that of the nanodiamond particles in the seeding suspension.</P>
Development of Low Power SRAM with Spacer-On Stopper Structure using Co Salicide
Joo Young Kim,Hyeongtag Jeon,Chongmu Lee,Ju Youn Kim,Nam-Chul Kim,Sung Jin Kim,Yangdo Kim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.51
We investigated an advanced disposable spacer for the Co salicide (C-ADS) structure to reduce eectively the short channel eects and to provide reliable device operating characteristics. The C-ADS structure with a modied gate sidewall was made to allow a relatively small enough cell contact open area to decrease the junction leakage current even with a very tight design rule. The C-ADS structure had excellent Co salicide uniformity due to the relatively large area provided for Co formation. Co salicide required a junction depth above 40 keV. The N+ and the P+ active sheet resistances were about 6 /sq, and the contact resistance values measured both at the N+ and the P+ node were less than several /sq for CoSix. The surface channel p-channel metal-oxide semiconductors (PMOS) showed a very low threshold voltage of about 0.65V compared to that of the buried-channel PMOS. The C-ADS structure eectively reduced the short-channel eects and provided reliable device operating characteristics.t.