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Spin and orbital angular momentum structure of Cu(111) and Au(111) surface states
Kim, Beomyoung,Kim, Choong H.,Kim, Panjin,Jung, Wonsig,Kim, Yeongkwan,Koh, Yoonyoung,Arita, Masashi,Shimada, Kenya,Namatame, Hirofumi,Taniguchi, Masaki,Yu, Jaejun,Kim, Changyoung American Physical Society 2012 Physical review. B, Condensed matter and materials Vol.85 No.19
Jo, Hyunji,Park, Beomyoung,Oh, Mihwa,Gwak, Eunji,Lee, Heeyoung,Lee, Soomin,Yoon, Yohan Korean Society for Food Science of Animal Resource 2014 한국축산식품학회지 Vol.34 No.6
This study developed probabilistic models to determine the initiation time of growth of Pseudomonas spp. in combinations with $NaNO_2$ and NaCl concentrations during storage at different temperatures. The combination of 8 NaCl concentrations (0, 0.25, 0.5, 0.75, 1, 1.25, 1.5, and 1.75%) and 9 $NaNO_2$ concentrations (0, 15, 30, 45, 60, 75, 90, 105, and 120 ppm) were prepared in a nutrient broth. The medium was placed in the wells of 96-well microtiter plates, followed by inoculation of a five-strain mixture of Pseudomonas in each well. All microtiter plates were incubated at 4, 7, 10, 12, and $15^{\circ}C$ for 528, 504, 504, 360 and 144 h, respectively. Growth (growth initiation; GI) or no growth was then determined by turbidity every 24 h. These growth response data were analyzed by a logistic regression to produce growth/no growth interface of Pseudomonas spp. and to calculate GI time. NaCl and $NaNO_2$ were significantly effective (p<0.05) on inhibiting Pseudomonas spp. growth when stored at $4-12^{\circ}C$. The developed model showed that at lower NaCl concentration, higher $NaNO_2$ level was required to inhibit Pseudomonas growth at $4-12^{\circ}C$. However, at $15^{\circ}C$, there was no significant effect of NaCl and $NaNO_2$. The model overestimated GI times by $58.2{\pm}17.5$ to $79.4{\pm}11%$. These results indicate that the probabilistic models developed in this study should be useful in calculating the GI times of Pseudomonas spp. in combination with NaCl and $NaNO_2$ concentrations, considering the over-prediction percentage.
Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides
Kang, Mingu,Kim, Beomyoung,Ryu, Sae Hee,Jung, Sung Won,Kim, Jimin,Moreschini, Luca,Jozwiak, Chris,Rotenberg, Eli,Bostwick, Aaron,Kim, Keun Su American Chemical Society 2017 NANO LETTERS Vol.17 No.3
<P>van der Waals two-dimensional (2D) semiconductors have emerged as a class of materials with promising device characteristics owing to the intrinsic band gap. For realistic applications, the ideal is to modify the band gap in a controlled manner by a mechanism that can be generally applied to this class of materials. Here, we report the observation of a universally tunable band gap in the family of bulk 2H transition metal dichalcogenides (TMDs) by in situ surface doping of Rb atoms. A series of angle-resolved photoemission spectra unexceptionally shows that the band gap of TMDs at the zone corners is modulated in the range of 0.8-2.0 eV, which covers a wide spectral range from visible to near-infrared, with a tendency from indirect to direct band gap. A key clue to understanding the mechanism of this band-gap engineering is provided by the spectroscopic signature of symmetry breaking and resultant spin-splitting, which can be explained by the formation of 2D electric dipole layers within the surface bilayer of TMDs. Our results establish the surface Stark effect as a universal mechanism of band-gap engineering on the basis of the strong 2D nature of van der Waals semiconductors.</P>
Electronic-dimensionality reduction of bulk MoS<sub>2</sub> by hydrogen treatment
Cho, Soohyun,Kim, Beom Seo,Kim, Beomyoung,Kyung, Wonshik,Seo, Jeongjin,Park, Min,Jeon, Jun Woo,Tanaka, Kiyohisa,Denlinger, Jonathan D.,Kim, Changyoung,Odkhuu, Dorj,Kim, Byung Hoon,Park, Seung Ryong The Royal Society of Chemistry 2018 Physical chemistry chemical physics Vol.20 No.35
<P>A reduction in the electronic-dimensionality of materials is one method for achieving improvements in material properties. Here, a reduction in electronic-dimensionality is demonstrated using a simple hydrogen treatment technique. Quantum well states from hydrogen-treated bulk 2H-MoS2 are observed using angle resolved photoemission spectroscopy (ARPES). The electronic states are confined within a few MoS2 layers after the hydrogen treatment. A significant reduction in the band-gap can also be achieved after the hydrogen treatment, and both phenomena can be explained by the formation of sulfur vacancies generated by the chemical reaction between sulfur and hydrogen.</P>