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금속-산화막-반도체 소자의 계면전하 발생에 미치는 정공과 수소의 역할
노용한 成均館大學校 科學技術硏究所 1996 論文集 Vol.47 No.2
MOS 소자의 게이트산화막에 정공이 트랩핑된 후 계면전하의 발생 메커니즘을 게이트 금속의 종류 및 게이트 인가된 전압의 극성의 함수로써 연구하였다. 기존의 정공 트랩핑에 의한 계면전하의 발생 메커니즘과는 다른 새로운 메커니즘을 확인하였으며, 트랩핑된 정공과 발생된 계면전하의 상관관계는 16 : 1이였다. 본 연구 결과와 기존의 모델들을 토대로 고열전자에 의하여 MOS 소자의 발생하는 계면전하의 발생 메커니즘을 전하와 수소의 역할을 구분할 수 있는 전자주입 fluence의 함수로서 규명하였다. Mechanisms of interface traps induced by hole trapping was investigated as a function of both gate metals and gate polarity applied during the stressing. We find that a new generation mechanism which has not been reported previously, and show that approximately one interface trap is induced by sixteen trapped holes. Based on the current findings, we propose a comprehensive interface-trap generation mechanism which can predict the hot electron effects so that clarify the roles of hydrogen and trapped holes as a function of injection fluences.
Development of Interface States As a Function of Time in MOS Devices : Twin-Peak
Roh, Yong-han 成均館大學校 科學技術硏究所 1995 論文集 Vol.46 No.2
Al 및 poly-Si gate MOS capacitor에 FNT메커니즘을 이용하여 전자를 주입한 후 twin-peak의 발전과정을 MOS capacitor에 인가된 게이트 볼테지의 극성에 따라서 어떻게 변화하는지 조사하였다. 기존의 발표된 결과하는 달리, 실험에 사용된 샘플에 따라서 FNT 전자주입을 게이트로부터 시켰을 경우에도 twin-peak가 발생할 수 있음을 확인하였다. 우리는 twin-peak의 형성이 주로 0.8 eV peak의 발생에 따른 것임을 확인하였다. 표면전하의 발생메커니즘과 결부하여, 우리는 이러한 현상을 설명할 수 있는 메커니즘을 제시하였다. The gate polarity dependence in the twin-peak development is investigated in Al and poly-Si gate MOS capacitors after FNT electron injection. Contrary to previously published reports, we demonstrate that the twin-peak can be observed even after gate FNT injection depending on the samples subjected. to the stressing. We find that the development of the twin-peak depends mainiy on the generation of the 0.8 eV peak. In conjunction with the mechanisms of interface trap formation, we suggest a mechanism which is belived to be responsible for this observation.
Nano-technology에 도입된 Dual Poly Gate에서의 DPN 공정 연구
김창집,노용한,Kim, Chang-Jib,Roh, Yong-Han 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.
Formation of Au Nanowires by DNA Molecules as a Template
김형진,노용한,홍병유,Hae-Gun Ji 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5
We developed a simple technique to form Au nanowires (AuNWs) by the conjugation of 2- aminoethanthio-capped gold nanoparticles (AET-AuNPs) and DNA molecules immobilized on 3- aminopropyltriethoxysilane (APS)-coated Si wafers. In this technique, the metallization process involved three steps: (1) DNA molecules were immobilized on the APS-coated Si substrate, (2) AET-AuNPs were formed via a strong chemical reaction between the thiol (-SH) group of AET and the AuNPs, and (3) AuNWs were then formed by the interaction between DNA and the AETAuNPs. We investigated the effects of the mole ratio (i.e., AuNPs/AET) and the incubation time in controlling the distance between AuNPs, and found that the incubation time was a very important factor for the formation of AuNWs.