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정중현,이혜연,최병춘 한국센서학회 1999 센서학회지 Vol.8 No.2
PbTe thin films of high quality were deposited on HF-treated Si(100) substrates at various substrate temperature by pulsed laser deposition technique. XRD patterns showed that PbTe layers were well-crystallized to a cubic phase with (h00) preferred orientation with tine substrate temperature up to 300℃. PbTe films could not form at substrate temperature above 400℃ because of reevaporation of the Pb. According to AFM image, the surface of films was composed of small granular crystals and flat matrix. According to the increase of substrate temperature, the grain size at film surface becomes larger. By Hall-effect measurement, the carrier concentration and Hall mobility of n-type PbTe films grown by T_(sub)=300 ℃ were 3.68 x l0^(18)cm^(-3) and 148 ㎠/Vs, respectively.
정중현,김명욱,박승철,김근묵,엄영호,노삼규 연세대학교 자연과학연구소 1982 學術論文集 Vol.9 No.-
처음으로 반절연성 InP:Fe를 SSD법으로 생장시키었다. Fe를 각각 0.5와 1.0 wt-% 첨가한 결정의 비저항은 실온에서 각각 3.1×10^7와 1.5×10^7Ω·cm이었으며, 저항의 온도 위존성에서 얻은 Fe의 에너지 준위는 전도대의 바닥 아래로 0.66 eV이었다. For the first time we obtained the semi-insulating InP:Fe crystals grown by SSD method. Their resistivities were 3.1×10^7 and 1.5×10^7Ω·cm in the Fe-doped crystals with contents of 0.5 and 1.0 wt-%, respectively. Temperature dependence of the crystal revealed the energy level of Fe as 0.66 eV from the bottom of the conduction band.
정중현,김진수,최병춘,노영우,정수태,조상복 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3
Bi4Ti3O12 (BIT), (Bi3.2Nd0.8)Ti3O12 (BNT), (Bi3.2Nd0.8)(Ti2.95Nb0.05)O12 (BNTN) and (Bi3.2 Nd0.8)(Ti2.95V0.05)O12 (BNTV) ceramics were prepared by using a solid state reaction method. The effects of Nd/Nb and Nd/V co-doping on the dielectric, ferroelectric and electrical properties were studied. Nd/Nb and Nd/V co-doping decreased the low-frequency dielectric dispersion and the electrical conductivity. The BNTN and the BNTV ceramics exhibited saturated P-E hysteresis loops and the corresponding remanent polarization increased. The Nd/Nb and Nd/V co-doping of BIT decreased its conductivity and improved its ferroelectric properties.
Luminescence Properties of Mn2+-Doped Zn2SiO4 Thin Films Grown by Using Pulsed Laser Deposition
정중현,양현경,정종원,문병기,최병춘,이성수,김정환 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3
Zn2SiO4:Mn2+ luminescent thin films were grown on Al2O3 (0001) substrates by using a pulsed laser deposition technique at substrate temperature of 600 ℃ under various oxygen pressures of 100, 200, 250, 300, 350 and 400 mTorr. The mechanism for the enhanced efficiency of the green emission from the Zn2SiO4:Mn2+ thin lms was investigated for various oxygen pressures. The crystallization, the surface morphology and the luminescent properties of Zn2SiO4:Mn2+ thin films are very dependent on the variation in the oxygen pressure. The enhanced luminescence for Zn2SiO4:Mn2+ thin films at an oxygen pressure of 400 mTorr may result not only from the improved crystallinity but also from reduced internal reflections caused by rougher surfaces. Also, the luminescent intensity and the surface roughness of the lms exhibited similar behaviors as functions of the oxygen pressure.