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吳煥述 건국대학교 1989 學術誌 Vol.33 No.2
This paper is described the damage effects by increasing surge voltage at high power T-MOSFET (Source No. PFA 2208, 2209). All samples are breakdown above 100 volt surge voltage. Particularly damage of SiO2 layer at 200 volt by one time is occurred. Poly vinyl tape and paper tape is used in order to remove dust at marking process. The result, 3000 volt ESD (Electrostatic Discharge) at poly vinyl tape and less than 100 volt at paper tape is measured.
경사형 굴절도파구조를 갖는 레이저 다이오드의 호울 버닝 효과
오환술 한국전기전자재료학회 1988 電氣電子材料學會誌 Vol.1 No.2
AlGaAs/GaAs 이종접합구조 레이저 다이오드의 활성층 두께를 변화시킬때 스트라이프폭과 광출력에 미치는 영향을 해석하였다. 안정된 단일발진 도파모우드를 위해서는 R>O되어야 함을 밝혔다. 고출력에서 캐리어분포와 이득분포에 대해 공간적 호울버닝 현상이 일어났고 이는 출력을 고정시키고 스트라이프폭만을 찬넬폭보다 크게 하여도 발생하였다.
吳煥述 건국대학교 1988 學術誌 Vol.32 No.2
The Characteristics of (Ga, Al) As/GaAs laser diode with lateral thickness variation in the active layer, which related to the stripe width and the output power, have been analyzed. For stable single mode and guiding mode operation, it's important that the value of R must be larger than zero. It is observed that the phenomena of spatial hole burning in the charge and gain distributions appears at high optical power. And also spatial hole burning is occurred when stripe width is larger than the channel width at fixed optical power.
오환술 건국대학교 1991 學術誌 Vol.35 No.2
The five epitaxial layers are grown on the N type GaAs substrate by the supercooling method in LPE system. The substrate was etched V-grooved shape which widths and depth is 2.8μm and 1.4μm respectlily. The 10μm stripe width was patterned on the epitaxial growing wafer for the purpose of reducing the threshold current. Cr/Au on the P type, AuGe/Ni on the N type are evaporated for the ohmic contact which is observed in the electric, optical characteristics. 250mA of the threshold current was measured in LD and the stable lasing power is possible in 2Ith. Also, the stable lasing mode is able to he expected by the observed Far Field Intensity of LD.
BAlq를 적용한 유기발광소자의 제작 및 특성 분석에 관한 연구
오환술,황수웅,강성종 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.1
BAlq was fabricated as for hole blocking layer in the OLED devices to investigate its electrical and optical characteristics. Device structure was ITO/$\alpha$ -NPD/EML/BAlq/Alq3/Al:Li using TYG-201, DPVBi (4, 4 - Bis (2, 2 - diphenylethen-1 - yls) - Biphenyl), Alq and DCJTB (4-(dicyanomethylene)-2- (1-propyls)6-methy 4H-pyrans) as green emitting material, blue emitting material, host material for red emission and red emitting guest material respectively. The OLED device showed optimum working voltage and electron density at 600 cd/$m^2$ when thickness of BAlq is 25$\AA$ for RGB OLED devices while their efficiencies are better at 50$\AA$ of BAlq. Red and blue color OLEDs also fabricated using 30$\AA$ thickness of BAlq and compared with those without BAlq layer. BAlq was more effective in electrical properties such as working voltage, current density and efficiency of red OLED than blue and green ones. This study describes that 30$\AA$ is optimum thickness of BAlq for best performance of full color OLED devices when using BAlq as a hole blocking material.