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$Sb_2O_3$첨가량에 의한 Barium-Titanates의 전기적 성질
박창엽,왕진석,김현재,Park, Chang-Yeop,Wang, Jin-Seok,Kim, Hyeon-Jae 대한전자공학회 1977 전자공학회지 Vol.14 No.1
공기중의 열처리에 의하여 상온에서 낮은 저항을 갖는 PTC 써미스터를 제작했다. 재현성을 높이기 위해 BaTiO3에 Al2O3, SiO2 및 TiO2를 첨가 했으며, 불순물로서 Sb2O3를 첨가했다. 시편은 공기 중에서 1,200℃∼1,380℃로서 가열되었으며, Sb2O3첨가량에 대한 저항관계를 조사했다. 이 시편들은 공기중의 열처리에서도 재현성이 좋았다. 연구된 시편은 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 및 0.16∼0.25wt% Sb2O3를 BaTiO3에 첨가하여 만들었으며 저항값은 14∼300ohm이었다. "Electrical Properties of Barium Titanates with Addition Sb2O3." PTC BaTiO3 in low resistance at room temperature was prepatred. Al2O3, SiO2 and TiO2 were doped with a view to improving reproduction. Sb2O3 was doped as impurity in order to control of resistivity of the specimens. The relations between the amount of Sb3O3 and electrical properties wereinvestigated. Of the compositions studied, additions of 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 and 0.16~0.25wt% Sb2O3 to BaTiC3 was low resistivity in 14-300 ohm-cm.00 ohm-cm.
Al-Si쇼트키 장벽을 이용한 표면 트랜지스터에 관한 연구
박창엽 연세대학교 산업기술연구소 1985 논문집 Vol.17 No.2
In this study, the surface transistors using Al-Si Schottky barrier with thickness of tunnel oxide layer 40Å were fabricated by photolithography method and those characteristics were investigated. As a result, current gain and offset voltage of the devices, in P-type were 15, 0.3V, in N-type 13, 0.4V, respectively. The device is featured by very simple processing, and shows promise in a variety of application, including VLSI high speed IC's.
$Pb({Zr_0.53}, {Ti_0.47})O_3$ 압전세라믹소자의 고주파필터에 관한 연구
박창엽,송준태 대한전기학회 1978 전기의 세계 Vol.27 No.3
The prezoelectric ceramic specimen compoxed of PbO, ZrO$_{2}$, TiO$_{2}$ were prepared in this Lab, and showed properties of dielectric constant .epsilon.$^{33}$ /.epsilon.$_{0}$ 487 at 1kHz, electromechanical coefficient Kr 0.524. As the characteristics of piezoelectric HF filter used these piezoelectric specimen were the resonant point 6.7 MHz, effective bandwidth 690KHz, it was exellant. Since a LC resonant filter can be replaced bt this piezoelectric HG filter, it will greatly contribute to compose a compact circuit. If the resont point can be controlled, this piezoelectric HF filter practically.
박창엽 대한전기학회 1979 전기의 세계 Vol.28 No.9
이글은 다음과 같이 구성되어 있다. 1. 서론 2. SIT의 특징 3. SIT의 응용 4. 전력용 SIT 5. 전기적 특성