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- 주제어 : n-ZnO/p-GaN heterojunction (검색결과 3 건)
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Influence of growth temperature and post-annealing on an n-ZnO/p-GaN heterojunction diode
Sharma, S.K.,Heo, S.,Lee, B.,Lee, H.,Kim, C.,Kim, D.Y. Elsevier 2014 CURRENT APPLIED PHYSICS Vol.14 No.12
We report on an n-ZnO/p-GaN heterojunction diode fabricated from zinc oxide (ZnO) films at various growth temperatures (450, 500, 550, and 600 <SUP>o</SUP>C) by RF sputtering. The films were subsequently annealed at 700 <SUP>o</SUP>C in N<SUB>2</SUB> ambient. To investigate the influence of the growth temperature of n-ZnO films, the microstructural, optical, and electrical properties were measured using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Hall measurements. The XRD pattern showed the preferred orientation along the c-axis (002) regardless of growth temperature. The PL spectra showed a dominant sharp near-band-edge (NBE) emission. Current-voltage (I-V) curves showed excellent rectification behavior. The turn-on voltage of the diode was observed to be 3.2 V for the films produced at 500 <SUP>o</SUP>C. The ideality factor of ZnO film was observed to be 1.37, which showed the best performance of the diode.
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Influence of growth temperature and post-annealing on an n-ZnO/p-GaN heterojunction diode
샤르마,허성은,이병호,이황호,김창민,김득영 한국물리학회 2014 Current Applied Physics Vol.14 No.12
We report on an n-ZnO/p-GaN heterojunction diode fabricated from zinc oxide (ZnO) films at various growth temperatures (450, 500, 550, and 600 C) by RF sputtering. The films were subsequently annealed at 700 C in N2 ambient. To investigate the influence of the growth temperature of n-ZnO films, the microstructural, optical, and electrical properties were measured using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Hall measurements. The XRD pattern showed the preferred orientation along the c-axis (002) regardless of growth temperature. The PL spectra showed a dominant sharp near-band-edge (NBE) emission. Currentevoltage (IeV) curves showed excellent rectification behavior. The turn-on voltage of the diode was observed to be 3.2 V for the films produced at 500 C. The ideality factor of ZnO film was observed to be 1.37, which showed the best performance of the diode.
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Effect of the Interface on n-ZnO/p-GaN Heterojunction Light Emitting Diodes
이주영,이종훈,김홍승,한원석,조형균,문진영,이호성 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.4
We report on n-ZnO/p-GaN heterojunction light-emitting diodes (LEDs) fabricated from ZnO films, for which the electrical properties and oxygen contents were controlled by post-annealing. Intense violet emission with a peak wavelength near 381 nm was observed in the electroluminescence (EL) spectra and was attributed to the near-band-edge emission of the n-ZnO layer. With increasing annealing time, however, the EL peak position broadened and showed a strong deep-level emission. The LEDs were yellowish in color due to the formation of an interface (i.e., a Ga-O mixed region) and to deep-level impurities associated with an increase in oxygen in the ZnO films and in the intermediate layer between the ZnO and the GaN layers.
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